SKM75GB12T4 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

SKM75GB12T4 Specs and Replacement

Type Designator: SKM75GB12T4

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 115 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V

tr ⓘ - Rise Time, typ: 39 nS

Coesⓘ - Output Capacitance, typ: 290 pF

Qg ⓘ - Total Gate Charge, typ: 425 nC

Package: MODULE

SKM75GB12T4 Substitution

- IGBT ⓘ Cross-Reference Search

SKM75GB12T4 datasheet

..1. Size:456K semikron
skm75gb12t4.pdf pdf_icon

SKM75GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 115 A Tj = 175 C Tc =80 C 88 A ICnom 75 A ICRM ICRM = 3xICnom 225 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 2 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 97 A Tj = 175 C SKM75GB12T4 Tc =80 C 73 A ... See More ⇒

5.1. Size:489K semikron
skm75gb12v.pdf pdf_icon

SKM75GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 114 A Tj = 175 C Tc =80 C 87 A ICnom 75 A ICRM ICRM = 3xICnom 225 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 2 tpsc VGE 20 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 97 A Tj = 175 C SKM75GB12V Tc =80 C 73 A IFnom 75 A ... See More ⇒

5.2. Size:592K semikron
skm75gb124d.pdf pdf_icon