All IGBT. SKM900GA12E4 Datasheet

 

SKM900GA12E4 IGBT. Datasheet pdf. Equivalent


   Type Designator: SKM900GA12E4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 900 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.83 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 100 nS
   Coesⓘ - Output Capacitance, typ: 3520 pF
   Qgⓘ - Total Gate Charge, typ: 5100 nC
   Package: MODULE

 SKM900GA12E4 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SKM900GA12E4 Datasheet (PDF)

 ..1. Size:348K  semikron
 skm900ga12e4.pdf

SKM900GA12E4 SKM900GA12E4

SKM900GA12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 1305 ATj = 175 CTc =80C 1003 AICnom 900 AICRM ICRM = 3xICnom 2700 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 4tpsc VGE 15 V Tj =150C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 871 ATj = 175 CSKM900GA12E4Tc

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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