SKM900GA12E4 Datasheet and Replacement

   Type Designator: SKM900GA12E4
   Type: IGBT
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 900 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.83 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 100 nS
   Coesⓘ - Output Capacitance, typ: 3520 pF
   Package: MODULE
      - IGBT Cross-Reference