SKM900GA12E4 Datasheet and Replacement
Type Designator: SKM900GA12E4
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 900 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.83 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 100 nS
Coesⓘ - Output Capacitance, typ: 3520 pF
Package: MODULE
SKM900GA12E4 substitution
SKM900GA12E4 Datasheet (PDF)
skm900ga12e4.pdf
SKM900GA12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 1305 ATj = 175 CTc =80C 1003 AICnom 900 AICRM ICRM = 3xICnom 2700 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 4tpsc VGE 15 V Tj =150C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 871 ATj = 175 CSKM900GA12E4Tc
Datasheet: T0160NB45A , T1500TB25E , SKM75GAR063D , SKM75GB12T4 , SKM75GB12V , SKM75GB176D , SKM800GA126D , SKM800GA176D , IRG4PC50W , VS-100MT060WDF , VS-100MT060WSP , VS-150MT060WDF , VS-20MT120UFAPBF , VS-20MT120UFP , VS-25MT060WFAPBF , VS-40MT120UHAPBF , VS-40MT120UHTAPBF .
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