SKM900GA12E4 PDF and Equivalents Search

 

SKM900GA12E4 Specs and Replacement

Type Designator: SKM900GA12E4

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 900 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.83 V @25℃

tr ⓘ - Rise Time, typ: 100 nS

Coesⓘ - Output Capacitance, typ: 3520 pF

Package: MODULE

 SKM900GA12E4 Substitution

- IGBT ⓘ Cross-Reference Search

 

SKM900GA12E4 datasheet

 ..1. Size:348K  semikron
 skm900ga12e4.pdf pdf_icon

SKM900GA12E4

SKM900GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 1305 A Tj = 175 C Tc =80 C 1003 A ICnom 900 A ICRM ICRM = 3xICnom 2700 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 4 tpsc VGE 15 V Tj =150 C 10 s VCES 1200 V Tj -40 ... 175 C IGBT4 Modules Inverse diode IF Tc =25 C 871 A Tj = 175 C SKM900GA12E4 Tc ... See More ⇒

Specs: T0160NB45A , T1500TB25E , SKM75GAR063D , SKM75GB12T4 , SKM75GB12V , SKM75GB176D , SKM800GA126D , SKM800GA176D , TGAN40N60FD , VS-100MT060WDF , VS-100MT060WSP , VS-150MT060WDF , VS-20MT120UFAPBF , VS-20MT120UFP , VS-25MT060WFAPBF , VS-40MT120UHAPBF , VS-40MT120UHTAPBF .

History: VS-150MT060WDF

Keywords - SKM900GA12E4 transistor spec

 SKM900GA12E4 cross reference
 SKM900GA12E4 equivalent finder
 SKM900GA12E4 lookup
 SKM900GA12E4 substitution
 SKM900GA12E4 replacement

 

 

 


 
↑ Back to Top
.