All IGBT. VS-25MT060WFAPBF Datasheet

 

VS-25MT060WFAPBF IGBT. Datasheet pdf. Equivalent


   Type Designator: VS-25MT060WFAPBF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 195 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 69 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.22 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Coesⓘ - Output Capacitance, typ: 714 pF
   Qgⓘ - Total Gate Charge, typ: 175 nC
   Package: MODULE

 VS-25MT060WFAPBF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

VS-25MT060WFAPBF Datasheet (PDF)

 0.1. Size:257K  vishay
 vs-25mt060wfapbf.pdf

VS-25MT060WFAPBF VS-25MT060WFAPBF

VS-25MT060WFAPbFwww.vishay.comVishay SemiconductorsFull Bridge IGBT MTP (Warp Speed IGBT), 50 AFEATURES Gen 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoft reverse recovery Very low conduction and switching losses Optional SMT thermistor Al2O3 DBC Very low stray inductance design for high speed operation Speed 8 kHz t

Datasheet: SKM800GA126D , SKM800GA176D , SKM900GA12E4 , VS-100MT060WDF , VS-100MT060WSP , VS-150MT060WDF , VS-20MT120UFAPBF , VS-20MT120UFP , IRG4PC40UD , VS-40MT120UHAPBF , VS-40MT120UHTAPBF , VS-50MT060WHTAPBF , VS-70MT060WHTAPBF , VS-70MT060WSP , ISL9V3040D3S , ISL9V3040S3S , GT50N322A .

 

 
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