VS-25MT060WFAPBF Specs and Replacement
Type Designator: VS-25MT060WFAPBF
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 195 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 69 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.22 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Coesⓘ - Output Capacitance, typ: 714 pF
Qg ⓘ - Total Gate Charge, typ: 175 nC
Package: MODULE VS-25MT060WFAPBF Substitution - IGBT ⓘ Cross-Reference Search
VS-25MT060WFAPBF datasheet
vs-25mt060wfapbf.pdf
VS-25MT060WFAPbF www.vishay.com Vishay Semiconductors Full Bridge IGBT MTP (Warp Speed IGBT), 50 A FEATURES Gen 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoft reverse recovery Very low conduction and switching losses Optional SMT thermistor Al2O3 DBC Very low stray inductance design for high speed operation Speed 8 kHz t... See More ⇒
Specs: SKM800GA126D , SKM800GA176D , SKM900GA12E4 , VS-100MT060WDF , VS-100MT060WSP , VS-150MT060WDF , VS-20MT120UFAPBF , VS-20MT120UFP , GT30F132 , VS-40MT120UHAPBF , VS-40MT120UHTAPBF , VS-50MT060WHTAPBF , VS-70MT060WHTAPBF , VS-70MT060WSP , ISL9V3040D3S , ISL9V3040S3S , GT50N322A .
History: VS-50MT060WHTAPBF
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History: VS-50MT060WHTAPBF
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