VS-40MT120UHAPBF Spec and Replacement, IGBT Equivalent Finder, Cross Reference

VS-40MT120UHAPBF Specs and Replacement

Type Designator: VS-40MT120UHAPBF

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 463 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.36 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V

Coesⓘ - Output Capacitance, typ: 380 pF

Qg ⓘ - Total Gate Charge, typ: 399 nC

Package: MODULE

VS-40MT120UHAPBF Substitution

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VS-40MT120UHAPBF datasheet

0.1. Size:287K vishay
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VS-40MT120UHAPbF, VS-40MT120UHTAPbF www.vishay.com Vishay Semiconductors Half Bridge IGBT MTP (Ultrafast NPT IGBT), 80 A FEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient Available 10 s short circuit capability Available Square RBSOA HEXFRED antiparallel diodes with ultrasoft reverse recovery and low VF ... See More ⇒

2.1. Size:287K vishay
vs-40mt120uhtapbf.pdf pdf_icon

Specs: SKM800GA176D , SKM900GA12E4 , VS-100MT060WDF , VS-100MT060WSP , VS-150MT060WDF , VS-20MT120UFAPBF , VS-20MT120UFP , VS-25MT060WFAPBF , IRGP4063 , VS-40MT120UHTAPBF , VS-50MT060WHTAPBF , VS-70MT060WHTAPBF , VS-70MT060WSP , ISL9V3040D3S , ISL9V3040S3S , GT50N322A , DM2G150SH6N .

History: VS-150MT060WDF

Keywords - VS-40MT120UHAPBF transistor spec

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History: VS-150MT060WDF

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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE

VS-40MT120UHAPBF PDF and Equivalents Search