All IGBT. VS-50MT060WHTAPBF Datasheet

 

VS-50MT060WHTAPBF IGBT. Datasheet pdf. Equivalent


   Type Designator: VS-50MT060WHTAPBF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 658 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 114 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Coesⓘ - Output Capacitance, typ: 510 pF
   Package: MODULE

 VS-50MT060WHTAPBF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

VS-50MT060WHTAPBF Datasheet (PDF)

 0.1. Size:134K  vishay
 vs-50mt060whtapbf.pdf

VS-50MT060WHTAPBF VS-50MT060WHTAPBF

VS-50MT060WHTAPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT MTP (Warp Speed IGBT), 114 AFEATURES Gen 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoft reverse recovery Very low conduction and switching losses Optional SMD thermistor (NTC) Very low junction to case thermal resistance UL approved file E78996MTP

Datasheet: VS-100MT060WDF , VS-100MT060WSP , VS-150MT060WDF , VS-20MT120UFAPBF , VS-20MT120UFP , VS-25MT060WFAPBF , VS-40MT120UHAPBF , VS-40MT120UHTAPBF , TGAN40N60FD , VS-70MT060WHTAPBF , VS-70MT060WSP , ISL9V3040D3S , ISL9V3040S3S , GT50N322A , DM2G150SH6N , DM2G150SH6NE , DM2G200SH12A .

 

 
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