VS-50MT060WHTAPBF Datasheet and Replacement
Type Designator: VS-50MT060WHTAPBF
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 658 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 114 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
Coesⓘ - Output Capacitance, typ: 510 pF
Package: MODULE
- IGBT Cross-Reference
VS-50MT060WHTAPBF Datasheet (PDF)
vs-50mt060whtapbf.pdf
VS-50MT060WHTAPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT MTP (Warp Speed IGBT), 114 AFEATURES Gen 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoft reverse recovery Very low conduction and switching losses Optional SMD thermistor (NTC) Very low junction to case thermal resistance UL approved file E78996MTP
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL
Keywords - VS-50MT060WHTAPBF transistor datasheet
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History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL
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