VS-50MT060WHTAPBF Specs and Replacement
Type Designator: VS-50MT060WHTAPBF
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 658 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 114 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Coesⓘ - Output Capacitance, typ: 510 pF
Qg ⓘ - Total Gate Charge, typ: 331 nC
Package: MODULE VS-50MT060WHTAPBF Substitution - IGBT ⓘ Cross-Reference Search
VS-50MT060WHTAPBF datasheet
vs-50mt060whtapbf.pdf
VS-50MT060WHTAPbF www.vishay.com Vishay Semiconductors Half Bridge IGBT MTP (Warp Speed IGBT), 114 A FEATURES Gen 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoft reverse recovery Very low conduction and switching losses Optional SMD thermistor (NTC) Very low junction to case thermal resistance UL approved file E78996 MTP ... See More ⇒
Specs: VS-100MT060WDF , VS-100MT060WSP , VS-150MT060WDF , VS-20MT120UFAPBF , VS-20MT120UFP , VS-25MT060WFAPBF , VS-40MT120UHAPBF , VS-40MT120UHTAPBF , FGPF4533 , VS-70MT060WHTAPBF , VS-70MT060WSP , ISL9V3040D3S , ISL9V3040S3S , GT50N322A , DM2G150SH6N , DM2G150SH6NE , DM2G200SH12A .
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