All IGBT. HYG30P120H1K1 Datasheet

 

HYG30P120H1K1 IGBT. Datasheet pdf. Equivalent


   Type Designator: HYG30P120H1K1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   trⓘ - Rise Time, typ: 40 nS
   Package: MODULE

 HYG30P120H1K1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HYG30P120H1K1 Datasheet (PDF)

 ..1. Size:964K  hy
 hyg30p120h1k1.pdf

HYG30P120H1K1 HYG30P120H1K1

HYG30P120H1K1IGBT ModuleF Features Low VCEsattrench IGBT Low switching losses 10us short circuit capability Fast & soft reverse recovery FRD Maximum junction temperature 125 Temperature sense included Industry standard package with insulated copper baseplateand soldering pins for PCB mountingTypical Applications Inverter for motor drive

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top