HYG30P120H1K1 Specs and Replacement
Type Designator: HYG30P120H1K1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 125 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Package: MODULE HYG30P120H1K1 Substitution - IGBT ⓘ Cross-Reference Search
HYG30P120H1K1 datasheet
hyg30p120h1k1.pdf
HYG30P120H1K1 IGBT Module F Features Low VCE sat trench IGBT Low switching losses 10us short circuit capability Fast & soft reverse recovery FRD Maximum junction temperature 125 Temperature sense included Industry standard package with insulated copper base plateand soldering pins for PCB mounting Typical Applications Inverter for motor drive ... See More ⇒
Specs: DM2G300SH6A , DM2G300SH6NE , DM2G400SH6A , DM2G400SH6N , HYG15P120A1K1 , HYG15P120A1K2 , HYG15P120B1K1 , HYG15P120H1K1 , BT40T60ANF , HYG40P120H1S , HYG75B120C1S , HYG75P120D1S , IFS100B12N3E4_B31 , IFS100B12N3E4_B39 , IFS150B12N3E4_B31 , IFS75B12N3E4_B31 , IFS75B12N3E4_B32 .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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