HYG30P120H1K1 Datasheet and Replacement
Type Designator: HYG30P120H1K1
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tj ⓘ - Maximum Junction Temperature: 125 ℃
tr ⓘ - Rise Time, typ: 40 nS
Package: MODULE
HYG30P120H1K1 substitution
HYG30P120H1K1 Datasheet (PDF)
hyg30p120h1k1.pdf
HYG30P120H1K1IGBT ModuleF Features Low VCEsattrench IGBT Low switching losses 10us short circuit capability Fast & soft reverse recovery FRD Maximum junction temperature 125 Temperature sense included Industry standard package with insulated copper baseplateand soldering pins for PCB mountingTypical Applications Inverter for motor drive
Datasheet: DM2G300SH6A , DM2G300SH6NE , DM2G400SH6A , DM2G400SH6N , HYG15P120A1K1 , HYG15P120A1K2 , HYG15P120B1K1 , HYG15P120H1K1 , IRG7IC28U , HYG40P120H1S , HYG75B120C1S , HYG75P120D1S , IFS100B12N3E4_B31 , IFS100B12N3E4_B39 , IFS150B12N3E4_B31 , IFS75B12N3E4_B31 , IFS75B12N3E4_B32 .
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