All IGBT. HYG30P120H1K1 Datasheet

 

HYG30P120H1K1 Datasheet and Replacement


   Type Designator: HYG30P120H1K1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   trⓘ - Rise Time, typ: 40 nS
   Package: MODULE
      - IGBT Cross-Reference

 

HYG30P120H1K1 Datasheet (PDF)

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HYG30P120H1K1

HYG30P120H1K1IGBT ModuleF Features Low VCEsattrench IGBT Low switching losses 10us short circuit capability Fast & soft reverse recovery FRD Maximum junction temperature 125 Temperature sense included Industry standard package with insulated copper baseplateand soldering pins for PCB mountingTypical Applications Inverter for motor drive

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: APTGT50X170BTP3 | HGTP10N120BN | MMG75SR120UZA | F3L75R07W2E3_B11 | CT20ASL-8 | STGB10M65DF2 | IGB30N60T

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