HYG40P120H1S Specs and Replacement
Type Designator: HYG40P120H1S
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 240 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
Package: MODULE HYG40P120H1S Substitution - IGBT ⓘ Cross-Reference Search
HYG40P120H1S datasheet
hyg400p10lr1d hyg400p10lr1u hyg400p10lr1v.pdf
HYG400P10LR1D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -100V/-40A RDS(ON)= 42m (typ.) @ VGS = -10V RDS(ON)= 48m (typ.) @ VGS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Portable equipment and battery powered systems DC-DC Converte... See More ⇒
Specs: DM2G300SH6NE , DM2G400SH6A , DM2G400SH6N , HYG15P120A1K1 , HYG15P120A1K2 , HYG15P120B1K1 , HYG15P120H1K1 , HYG30P120H1K1 , FGA60N65SMD , HYG75B120C1S , HYG75P120D1S , IFS100B12N3E4_B31 , IFS100B12N3E4_B39 , IFS150B12N3E4_B31 , IFS75B12N3E4_B31 , IFS75B12N3E4_B32 , IXYH20N120C3D1 .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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