All IGBT. HYG40P120H1S Datasheet

 

HYG40P120H1S Datasheet and Replacement


   Type Designator: HYG40P120H1S
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 240 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 80 nS
   Package: MODULE
 

 HYG40P120H1S substitution

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HYG40P120H1S Datasheet (PDF)

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HYG40P120H1S

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HYG40P120H1S

HYG400P10LR1D/U/VP-Channel Enhancement Mode MOSFETFeature Pin Description -100V/-40ARDS(ON)= 42m(typ.) @ VGS = -10VRDS(ON)= 48m(typ.) @ VGS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available(RoHS Compliant)TO-252-2L TO-251-3L TO-251-3SApplications Portable equipment and battery powered systems DC-DC Converte

Datasheet: DM2G300SH6NE , DM2G400SH6A , DM2G400SH6N , HYG15P120A1K1 , HYG15P120A1K2 , HYG15P120B1K1 , HYG15P120H1K1 , HYG30P120H1K1 , GT30F126 , HYG75B120C1S , HYG75P120D1S , IFS100B12N3E4_B31 , IFS100B12N3E4_B39 , IFS150B12N3E4_B31 , IFS75B12N3E4_B31 , IFS75B12N3E4_B32 , IXYH20N120C3D1 .

History: CRG15T60A93L | APT12GT60BRG | IXXH80N65B4 | 1MBH20D-060 | IXSP10N60B2D1 | MMG50W060XB6EN | MSG20T65FQT

Keywords - HYG40P120H1S transistor datasheet

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 HYG40P120H1S replacement

 

 
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