All IGBT. HYG40P120H1S Datasheet

 

HYG40P120H1S Datasheet and Replacement


   Type Designator: HYG40P120H1S
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 240 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 80 nS
   Package: MODULE
      - IGBT Cross-Reference

 

HYG40P120H1S Datasheet (PDF)

 ..1. Size:896K  hy
 hyg40p120h1s.pdf pdf_icon

HYG40P120H1S

 9.1. Size:1393K  hymexa
 hyg400p10lr1d hyg400p10lr1u hyg400p10lr1v.pdf pdf_icon

HYG40P120H1S

HYG400P10LR1D/U/VP-Channel Enhancement Mode MOSFETFeature Pin Description -100V/-40ARDS(ON)= 42m(typ.) @ VGS = -10VRDS(ON)= 48m(typ.) @ VGS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available(RoHS Compliant)TO-252-2L TO-251-3L TO-251-3SApplications Portable equipment and battery powered systems DC-DC Converte

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: MG25Q6ES51 | 7MBR75U2B060

Keywords - HYG40P120H1S transistor datasheet

 HYG40P120H1S cross reference
 HYG40P120H1S equivalent finder
 HYG40P120H1S lookup
 HYG40P120H1S substitution
 HYG40P120H1S replacement

 

 
Back to Top

 


 
.