IFS100B12N3E4_B39 Datasheet. Specs and Replacement
Type Designator: IFS100B12N3E4_B39 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 515 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
Package: MODULE
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IFS100B12N3E4_B39 Substitution
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IFS100B12N3E4_B39 datasheet
ifs100b12n3e4 b39.pdf
Technische Information / Technical Information IGBT-Module IFS100B12N3E4_B39 IGBT-modules MIPAQ base Modul mit Trench/Feldstopp IGBT4, gr erer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current sense shunt Vorl ufige Daten / Preliminary Data V = 1200V CES I = 100A / I = 200A C ... See More ⇒
ifs100b12n3e4 b31.pdf
/ Technical Information IGBT- IFS100B12N3E4_B31 IGBT-modules MIPAQ base / IGBT4 and HE diode and MIPAQ base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current sense shun... See More ⇒
ifs100b12n3e4-b31.pdf
Technische Information / Technical Information IGBT-Module IFS100B12N3E4_B31 IGBT-modules MIPAQ base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQ base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current sense shunt Vorl ufige Daten / Preliminary Data V = 1200V CES I = 100A / I = 200A C nom CRM Typ... See More ⇒
Specs: HYG15P120A1K2, HYG15P120B1K1, HYG15P120H1K1, HYG30P120H1K1, HYG40P120H1S, HYG75B120C1S, HYG75P120D1S, IFS100B12N3E4_B31, RJP30H1DPD, IFS150B12N3E4_B31, IFS75B12N3E4_B31, IFS75B12N3E4_B32, IXYH20N120C3D1, IXYH20N120C3, IXYH30N120C3, IXYH30N120C3D1, IXA4I1200UC
Keywords - IFS100B12N3E4_B39 transistor spec
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