IFS100B12N3E4_B39 IGBT. Datasheet pdf. Equivalent
Type Designator: IFS100B12N3E4_B39
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 515 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 25 nS
Package: MODULE
IFS100B12N3E4_B39 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IFS100B12N3E4_B39 Datasheet (PDF)
ifs100b12n3e4 b39.pdf
Technische Information / Technical InformationIGBT-ModuleIFS100B12N3E4_B39IGBT-modulesMIPAQbase Modul mit Trench/Feldstopp IGBT4, grerer Emitter Controlled 4 Diode undStrommesswiderstandMIPAQbase module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and currentsense shuntVorlufige Daten / Preliminary DataV = 1200VCESI = 100A / I = 200AC
ifs100b12n3e4 b31.pdf
/ Technical InformationIGBT-IFS100B12N3E4_B31IGBT-modulesMIPAQbase / IGBT4 and HE diodeand MIPAQbase module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current senseshun
ifs100b12n3e4-b31.pdf
Technische Information / Technical InformationIGBT-ModuleIFS100B12N3E4_B31IGBT-modulesMIPAQbase Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode undStrommesswiderstandMIPAQbase module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current senseshuntVorlufige Daten / Preliminary DataV = 1200VCESI = 100A / I = 200AC nom CRMTyp
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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