IFS100B12N3E4_B39 Datasheet. Specs and Replacement

Type Designator: IFS100B12N3E4_B39  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 515 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃

tr ⓘ - Rise Time, typ: 25 nS

Package: MODULE

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IFS100B12N3E4_B39 datasheet

 0.1. Size:662K  infineon
ifs100b12n3e4 b39.pdf pdf_icon

IFS100B12N3E4_B39

Technische Information / Technical Information IGBT-Module IFS100B12N3E4_B39 IGBT-modules MIPAQ base Modul mit Trench/Feldstopp IGBT4, gr erer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current sense shunt Vorl ufige Daten / Preliminary Data V = 1200V CES I = 100A / I = 200A C ... See More ⇒

 0.2. Size:893K  infineon
ifs100b12n3e4 b31.pdf pdf_icon

IFS100B12N3E4_B39

/ Technical Information IGBT- IFS100B12N3E4_B31 IGBT-modules MIPAQ base / IGBT4 and HE diode and MIPAQ base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current sense shun... See More ⇒

 1.1. Size:696K  infineon
ifs100b12n3e4-b31.pdf pdf_icon

IFS100B12N3E4_B39

Technische Information / Technical Information IGBT-Module IFS100B12N3E4_B31 IGBT-modules MIPAQ base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQ base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current sense shunt Vorl ufige Daten / Preliminary Data V = 1200V CES I = 100A / I = 200A C nom CRM Typ... See More ⇒

Specs: HYG15P120A1K2, HYG15P120B1K1, HYG15P120H1K1, HYG30P120H1K1, HYG40P120H1S, HYG75B120C1S, HYG75P120D1S, IFS100B12N3E4_B31, RJP30H1DPD, IFS150B12N3E4_B31, IFS75B12N3E4_B31, IFS75B12N3E4_B32, IXYH20N120C3D1, IXYH20N120C3, IXYH30N120C3, IXYH30N120C3D1, IXA4I1200UC

Keywords - IFS100B12N3E4_B39 transistor spec

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