All IGBT. IFS100B12N3E4_B39 Datasheet

 

IFS100B12N3E4_B39 Datasheet and Replacement


   Type Designator: IFS100B12N3E4_B39
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 515 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 25 nS
   Package: MODULE
      - IGBT Cross-Reference

 

IFS100B12N3E4_B39 Datasheet (PDF)

 0.1. Size:662K  infineon
 ifs100b12n3e4 b39.pdf pdf_icon

IFS100B12N3E4_B39

Technische Information / Technical InformationIGBT-ModuleIFS100B12N3E4_B39IGBT-modulesMIPAQbase Modul mit Trench/Feldstopp IGBT4, grerer Emitter Controlled 4 Diode undStrommesswiderstandMIPAQbase module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and currentsense shuntVorlufige Daten / Preliminary DataV = 1200VCESI = 100A / I = 200AC

 0.2. Size:893K  infineon
 ifs100b12n3e4 b31.pdf pdf_icon

IFS100B12N3E4_B39

/ Technical InformationIGBT-IFS100B12N3E4_B31IGBT-modulesMIPAQbase / IGBT4 and HE diodeand MIPAQbase module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current senseshun

 1.1. Size:696K  infineon
 ifs100b12n3e4-b31.pdf pdf_icon

IFS100B12N3E4_B39

Technische Information / Technical InformationIGBT-ModuleIFS100B12N3E4_B31IGBT-modulesMIPAQbase Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode undStrommesswiderstandMIPAQbase module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current senseshuntVorlufige Daten / Preliminary DataV = 1200VCESI = 100A / I = 200AC nom CRMTyp

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Keywords - IFS100B12N3E4_B39 transistor datasheet

 IFS100B12N3E4_B39 cross reference
 IFS100B12N3E4_B39 equivalent finder
 IFS100B12N3E4_B39 lookup
 IFS100B12N3E4_B39 substitution
 IFS100B12N3E4_B39 replacement

 

 
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