IFS150B12N3E4_B31 IGBT. Datasheet pdf. Equivalent
Type Designator: IFS150B12N3E4_B31
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 750
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 150
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.75
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.4
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 25
Package: MODULE
IFS150B12N3E4_B31 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IFS150B12N3E4_B31 Datasheet (PDF)
ifs150b12n3e4 b31.pdf
/ Technical InformationIGBT-IFS150B12N3E4_B31IGBT-modules / Preliminary DataV = 1200VCESI = 150A / I = 300AC nom CRM Typical Applications Motor Drives Servo Drives Electrical Features Low Switching Losses V Low VCEsat CEsat T
ifs150v12pt4.pdf
Technical Information MIPAQ serve IFS150V12PT4 preliminary data Key data Power module using IGBT4 technology in sixpack configuration. Isolated IGBT driver, protection and temperature sensor included. Topology B6I Rated semiconductor data 1200V, 150A Load type Inductive, resistive Industrial drives, UPS, solar Typical applications inverters, auxiliary inverters tem
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