All IGBT. IFS150B12N3E4_B31 Datasheet

 

IFS150B12N3E4_B31 Datasheet and Replacement


   Type Designator: IFS150B12N3E4_B31
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 750 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 25 nS
   Package: MODULE
 

 IFS150B12N3E4_B31 substitution

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IFS150B12N3E4_B31 Datasheet (PDF)

 0.1. Size:890K  infineon
 ifs150b12n3e4 b31.pdf pdf_icon

IFS150B12N3E4_B31

/ Technical InformationIGBT-IFS150B12N3E4_B31IGBT-modules / Preliminary DataV = 1200VCESI = 150A / I = 300AC nom CRM Typical Applications Motor Drives Servo Drives Electrical Features Low Switching Losses V Low VCEsat CEsat T

 8.1. Size:616K  infineon
 ifs150v12pt4.pdf pdf_icon

IFS150B12N3E4_B31

Technical Information MIPAQ serve IFS150V12PT4 preliminary data Key data Power module using IGBT4 technology in sixpack configuration. Isolated IGBT driver, protection and temperature sensor included. Topology B6I Rated semiconductor data 1200V, 150A Load type Inductive, resistive Industrial drives, UPS, solar Typical applications inverters, auxiliary inverters tem

Datasheet: HYG15P120B1K1 , HYG15P120H1K1 , HYG30P120H1K1 , HYG40P120H1S , HYG75B120C1S , HYG75P120D1S , IFS100B12N3E4_B31 , IFS100B12N3E4_B39 , IKW75N60T , IFS75B12N3E4_B31 , IFS75B12N3E4_B32 , IXYH20N120C3D1 , IXYH20N120C3 , IXYH30N120C3 , IXYH30N120C3D1 , IXA4I1200UC , IXA4IF1200TC .

History: IKB30N65ES5 | BLG40T65FUK-F | IXGH30N120C3H1 | STGB14NC60KD | MIXA40WB1200TED | MKI50-06A7 | MMG150D120B6TN

Keywords - IFS150B12N3E4_B31 transistor datasheet

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