IFS150B12N3E4_B31 Specs and Replacement
Type Designator: IFS150B12N3E4_B31
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 750 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 150 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
Package: MODULE IFS150B12N3E4_B31 Substitution - IGBT ⓘ Cross-Reference Search
IFS150B12N3E4_B31 datasheet
ifs150b12n3e4 b31.pdf
/ Technical Information IGBT- IFS150B12N3E4_B31 IGBT-modules / Preliminary Data V = 1200V CES I = 150A / I = 300A C nom CRM Typical Applications Motor Drives Servo Drives Electrical Features Low Switching Losses V Low V CEsat CEsat T ... See More ⇒
ifs150v12pt4.pdf
Technical Information MIPAQ serve IFS150V12PT4 preliminary data Key data Power module using IGBT4 technology in sixpack configuration. Isolated IGBT driver, protection and temperature sensor included. Topology B6I Rated semiconductor data 1200V, 150A Load type Inductive, resistive Industrial drives, UPS, solar Typical applications inverters, auxiliary inverters tem... See More ⇒
Specs: HYG15P120B1K1 , HYG15P120H1K1 , HYG30P120H1K1 , HYG40P120H1S , HYG75B120C1S , HYG75P120D1S , IFS100B12N3E4_B31 , IFS100B12N3E4_B39 , FGH60N60SFD , IFS75B12N3E4_B31 , IFS75B12N3E4_B32 , IXYH20N120C3D1 , IXYH20N120C3 , IXYH30N120C3 , IXYH30N120C3D1 , IXA4I1200UC , IXA4IF1200TC .
Keywords - IFS150B12N3E4_B31 transistor spec
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