IFS75B12N3E4_B32 IGBT. Datasheet pdf. Equivalent
Type Designator: IFS75B12N3E4_B32
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 385 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 20 nS
Package: MODULE
IFS75B12N3E4_B32 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IFS75B12N3E4_B32 Datasheet (PDF)
ifs75b12n3e4 b31.pdf
/ Technical InformationIGBT-IFS75B12N3E4_B31IGBT-modulesMIPAQbase Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQbase module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt IGBT- / IGBT,Inverter / Preliminary Dat
ifs75b12n3e4 b32.pdf
/ Technical InformationIGBT-IFS75B12N3E4_B32IGBT-modulesMIPAQbase / IGBT4 and 4 diodeand MIPAQbase module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current senseshunt
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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