All IGBT. IFS75B12N3E4_B32 Datasheet

 

IFS75B12N3E4_B32 Datasheet and Replacement


   Type Designator: IFS75B12N3E4_B32
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 385 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 20 nS
   Package: MODULE
 

 IFS75B12N3E4_B32 substitution

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IFS75B12N3E4_B32 Datasheet (PDF)

 0.1. Size:747K  infineon
 ifs75b12n3e4 b31.pdf pdf_icon

IFS75B12N3E4_B32

/ Technical InformationIGBT-IFS75B12N3E4_B31IGBT-modulesMIPAQbase Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQbase module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt IGBT- / IGBT,Inverter / Preliminary Dat

 0.2. Size:898K  infineon
 ifs75b12n3e4 b32.pdf pdf_icon

IFS75B12N3E4_B32

/ Technical InformationIGBT-IFS75B12N3E4_B32IGBT-modulesMIPAQbase / IGBT4 and 4 diodeand MIPAQbase module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current senseshunt

Datasheet: HYG30P120H1K1 , HYG40P120H1S , HYG75B120C1S , HYG75P120D1S , IFS100B12N3E4_B31 , IFS100B12N3E4_B39 , IFS150B12N3E4_B31 , IFS75B12N3E4_B31 , RJH30E2DPP , IXYH20N120C3D1 , IXYH20N120C3 , IXYH30N120C3 , IXYH30N120C3D1 , IXA4I1200UC , IXA4IF1200TC , IXA4IF1200UC , IXA70I1200NA .

History: APT100GN60LDQ4G | IGC18T120T8Q | DIM200PLM33-F | NSGM300GB120B | IKB30N65EH5 | NGTB25N120L | NGTB30N135IHR

Keywords - IFS75B12N3E4_B32 transistor datasheet

 IFS75B12N3E4_B32 cross reference
 IFS75B12N3E4_B32 equivalent finder
 IFS75B12N3E4_B32 lookup
 IFS75B12N3E4_B32 substitution
 IFS75B12N3E4_B32 replacement

 

 
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