All IGBT. IXYR100N120C3 Datasheet

 

IXYR100N120C3 Datasheet and Replacement


   Type Designator: IXYR100N120C3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 484 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 104 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.96 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 90 nS
   Coesⓘ - Output Capacitance, typ: 353 pF
   Qgⓘ - Total Gate Charge, typ: 260 nC
   Package: ISOPLUS247
      - IGBT Cross-Reference

 

IXYR100N120C3 Datasheet (PDF)

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IXYR100N120C3

1200V XPTTM IGBT VCES = 1200VIXYR100N120C3GenX3TM IC110 = 56A VCE(sat) 3.50V (Electrically Isolated Tab)tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingISOPLUS247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1200 VVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: FF150R12KS4

Keywords - IXYR100N120C3 transistor datasheet

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