IXYR100N120C3 Specs and Replacement
Type Designator: IXYR100N120C3
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 484 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 104 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.96 V @25℃
tr ⓘ - Rise Time, typ: 90 nS
Coesⓘ - Output Capacitance, typ: 353 pF
Package: ISOPLUS247
IXYR100N120C3 Substitution - IGBT ⓘ Cross-Reference Search
IXYR100N120C3 datasheet
Specs: IXYH30N120C3 , IXYH30N120C3D1 , IXA4I1200UC , IXA4IF1200TC , IXA4IF1200UC , IXA70I1200NA , IXYP20N120C3 , IXYP30N120C3 , IKW50N60T , IXYH40N120B3 , IXYH40N120B3D1 , IXYH40N120C3 , IXYH40N120C3D1 , IXYH50N120C3D1 , IXYK100N120C3 , IXYK120N120C3 , SG12N06DP .
Keywords - IXYR100N120C3 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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