All IGBT. IXYR100N120C3 Datasheet

 

IXYR100N120C3 Datasheet and Replacement


   Type Designator: IXYR100N120C3
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 484 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 104 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.96 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 90 nS
   Coesⓘ - Output Capacitance, typ: 353 pF
   Package: ISOPLUS247
 

 IXYR100N120C3 substitution

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IXYR100N120C3 Datasheet (PDF)

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IXYR100N120C3

1200V XPTTM IGBT VCES = 1200VIXYR100N120C3GenX3TM IC110 = 56A VCE(sat) 3.50V (Electrically Isolated Tab)tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingISOPLUS247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1200 VVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous

Datasheet: IXYH30N120C3 , IXYH30N120C3D1 , IXA4I1200UC , IXA4IF1200TC , IXA4IF1200UC , IXA70I1200NA , IXYP20N120C3 , IXYP30N120C3 , MBQ50T65FDSC , IXYH40N120B3 , IXYH40N120B3D1 , IXYH40N120C3 , IXYH40N120C3D1 , IXYH50N120C3D1 , IXYK100N120C3 , IXYK120N120C3 , SG12N06DP .

History: SKM150GB123D

Keywords - IXYR100N120C3 transistor datasheet

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