DM1GL75SH12A Specs and Replacement
Type Designator: DM1GL75SH12A
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 600 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
tr ⓘ - Rise Time, typ: 65 nS
Coesⓘ - Output Capacitance, typ: 400 pF
Package: MODULE DM1GL75SH12A Substitution - IGBT ⓘ Cross-Reference Search
DM1GL75SH12A datasheet
dm1gl75sh12a.pdf
Discontinuance (Aug. 31, 2013) DM1GL75SH12A July. 2010 High Power SPT+ & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-1 Package devices are optimized to reduce losses and Equivalent Circuit switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives ... See More ⇒
Specs: DL2G100SH6A, DL2G100SH6N, DL2G50SH12A, DL2G50SH6A, DL2G50SH6N, DL2G75SH12A, DL2G75SH6A, DL2G75SH6N, IRGP4063, DM2G100SH12A, DM2G100SH6A, DM2G100SH6N, DM2G150SH12A, DM2G150SH12AE, DM2G150SH6A, DM2G50SH12A, DM2G50SH6A
Keywords - DM1GL75SH12A transistor spec
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