All IGBT. DM1GL75SH12A Datasheet

 

DM1GL75SH12A Datasheet and Replacement


   Type Designator: DM1GL75SH12A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 600 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 65 nS
   Coesⓘ - Output Capacitance, typ: 400 pF
   Qg ⓘ - Total Gate Charge, typ: 780 nC
   Package: MODULE
 

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DM1GL75SH12A Datasheet (PDF)

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DM1GL75SH12A

Discontinuance (Aug. 31, 2013) DM1GL75SH12A July. 2010 High Power SPT+ & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWINS IGBT 7DM-1 Package devices are optimized to reduce losses and Equivalent Circuit switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives

Datasheet: DL2G100SH6A , DL2G100SH6N , DL2G50SH12A , DL2G50SH6A , DL2G50SH6N , DL2G75SH12A , DL2G75SH6A , DL2G75SH6N , BT60T60ANFK , DM2G100SH12A , DM2G100SH6A , DM2G100SH6N , DM2G150SH12A , DM2G150SH12AE , DM2G150SH6A , DM2G50SH12A , DM2G50SH6A .

History: SHSMG1010

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