All IGBT. CY20AAJ-8H Datasheet

 

CY20AAJ-8H Datasheet and Replacement


   Type Designator: CY20AAJ-8H
   Type: IGBT + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 0.5 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
   |Ic| ⓘ - Maximum Collector Current: 130(PULSE) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   Package: SOP-8
 

 CY20AAJ-8H substitution

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CY20AAJ-8H Datasheet (PDF)

 ..1. Size:345K  renesas
 cy20aaj-8h.pdf pdf_icon

CY20AAJ-8H

Preliminary Datasheet CY20AAJ-8H R07DS1007EJ0300(Previous: REJ03G0282-0200)Nch IGBT for Strobe Flash Rev.3.00400V, 150A, 4V drive Jan 30, 2013Features VCES : 400 V ICM : 130 A Drive voltage : 4 V High speed switching Outline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)5,6,7,856781,2,3 : Emitter4 : Gate4 4325,

 5.1. Size:39K  mitsubishi
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CY20AAJ-8H

MITSUBISHI IGBTMITSUBISHI IGBTCY20AAJ-8CY20AAJ-8Nch IGBT for STROBE FLASHERNch IGBT for STROBE FLASHERCY20AAJ-8 OUTLINE DRAWING Dimensions in mm 1.8 MAX.5.00.41.27 EMITTER GATE COLLECTOR VCES ............................................................................... 400V ICM ...............

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

Keywords - CY20AAJ-8H transistor datasheet

 CY20AAJ-8H cross reference
 CY20AAJ-8H equivalent finder
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