SHD739601 Datasheet and Replacement
Type Designator: SHD739601
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 250 nS
Coesⓘ - Output Capacitance, typ: 200 pF
Package: SHD-6
- IGBT Cross-Reference
SHD739601 Datasheet (PDF)
shd739601.pdf

SENSITRONSHD739601SEMICONDUCTORTECHNICAL DATADATA SHEET 2049, REV. -Formerly part number SHSMG10101000 VOLT, 50 AMP IGBT DEVICEHIGH SPEED, LOW VCE IGBTELECTRICAL CHARACTERISTICS (Tj=250C UNLESS OTHERWISE SPECIFIED)PARAMETER SYMBOL MIN TYP MAX UNITPARAMETER SYMBOL MIN TYP MAX UNITIGBT SPECIFICATIONSCollector to Emitter Breakdown VoltageBVCES 1000 - - VIC = 3 mA, VG
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: IXGR72N60B3H1 | 1MB08D-120 | IXGT40N60C2D1 | DM2G75SH6A | NCE50TD120VT | 1MBI600S-120 | IXGH64N60A3
Keywords - SHD739601 transistor datasheet
SHD739601 cross reference
SHD739601 equivalent finder
SHD739601 lookup
SHD739601 substitution
SHD739601 replacement
History: IXGR72N60B3H1 | 1MB08D-120 | IXGT40N60C2D1 | DM2G75SH6A | NCE50TD120VT | 1MBI600S-120 | IXGH64N60A3



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