SHD739601 Datasheet and Replacement
Type Designator: SHD739601
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 250 nS
Coesⓘ - Output Capacitance, typ: 200 pF
Package: SHD-6
SHD739601 substitution
SHD739601 Datasheet (PDF)
shd739601.pdf
SENSITRONSHD739601SEMICONDUCTORTECHNICAL DATADATA SHEET 2049, REV. -Formerly part number SHSMG10101000 VOLT, 50 AMP IGBT DEVICEHIGH SPEED, LOW VCE IGBTELECTRICAL CHARACTERISTICS (Tj=250C UNLESS OTHERWISE SPECIFIED)PARAMETER SYMBOL MIN TYP MAX UNITPARAMETER SYMBOL MIN TYP MAX UNITIGBT SPECIFICATIONSCollector to Emitter Breakdown VoltageBVCES 1000 - - VIC = 3 mA, VG
Datasheet: DM2G75SH6A , DM2G75SH6N , CY20AAJ-8H , CY25AAJ-8F , SHD724401 , SHD724402 , SHD724502 , SHD724602 , RJP30H1DPD , SHDG1025 , SHSMG1009 , SHSMG1010 , VS-GB100LH120N , VS-GB100LP120N , VS-GB100NH120N , VS-GB100TH120N , VS-GB100TH120U .
History: STGB19NC60KDT4
Keywords - SHD739601 transistor datasheet
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History: STGB19NC60KDT4
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