SHSMG1010 IGBT. Datasheet pdf. Equivalent
Type Designator: SHSMG1010
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 250 nS
Coesⓘ - Output Capacitance, typ: 200 pF
Package: SHD-6
SHSMG1010 Transistor Equivalent Substitute - IGBT Cross-Reference Search
SHSMG1010 Datasheet (PDF)
shsmg1010.pdf
SENSITRONSHD739601SEMICONDUCTORTECHNICAL DATADATA SHEET 2049, REV. -Formerly part number SHSMG10101000 VOLT, 50 AMP IGBT DEVICEHIGH SPEED, LOW VCE IGBTELECTRICAL CHARACTERISTICS (Tj=250C UNLESS OTHERWISE SPECIFIED)PARAMETER SYMBOL MIN TYP MAX UNITPARAMETER SYMBOL MIN TYP MAX UNITIGBT SPECIFICATIONSCollector to Emitter Breakdown VoltageBVCES 1000 - - VIC = 3 mA, VG
shsmg1009.pdf
SENSITRONSHD724401 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1006, REV. - Formerly part number SHSMG1009 600 VOLT, 40 AMP IGBT DEVICE HIGH SPEED, IMPROVED SCSOA ELECTRICAL CHARACTERISTICS (Tj=250C UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL MIN TYP MAX UNIT PARAMETER SYMBOL MIN TYP MAX UNIT IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage BVCES 600 - - VIC
Datasheet: CY25AAJ-8F , SHD724401 , SHD724402 , SHD724502 , SHD724602 , SHD739601 , SHDG1025 , SHSMG1009 , RJP63F3DPP-M0 , VS-GB100LH120N , VS-GB100LP120N , VS-GB100NH120N , VS-GB100TH120N , VS-GB100TH120U , VS-GB100TP120N , VS-GB100TP120U , VS-GB100TS60NPBF .
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