VS-ENQ030L120S Datasheet and Replacement

   Type Designator: VS-ENQ030L120S
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 121 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.12 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.6 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 39 nS
   Coesⓘ - Output Capacitance, typ: 124 pF
   Qg ⓘ - Total Gate Charge, typ: 157 nC
   Package: MODULE
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