VS-ENQ030L120S Specs and Replacement
Type Designator: VS-ENQ030L120S
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 121 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.12 V @25℃
tr ⓘ - Rise Time, typ: 39 nS
Coesⓘ - Output Capacitance, typ: 124 pF
Package: MODULE VS-ENQ030L120S Substitution - IGBT ⓘ Cross-Reference Search
VS-ENQ030L120S datasheet
vs-enq030l120s.pdf
VS-ENQ030L120S www.vishay.com Vishay Semiconductors EMIPAK-1B PressFit Power Module Neutral Point Clamp Topology, 30 A FEATURES Ultrafast Trench IGBT technology HEXFRED and silicon carbide diode technology PressFit pins technology Exposed Al2O3 substrate with low thermal resistance Low internal inductances UL approved file E78996 EMIPAK-1B Material c... See More ⇒
Specs: VS-GB75YF120UT , VS-GB90DA120U , VS-GB90DA60U , VS-GB90SA120U , VS-GP100TS60SFPBF , VS-GP250SA60S , VS-GP300TD60S , VS-GP400TD60S , GT30G122 , VS-ETF075Y60U , VS-ETL015Y120H , F12-25R12KT4G , F12-35R12KT4G , F3L100R07W2E3_B11 , F3L100R12W2H3_B11 , F3L150R07W2E3_B11 , F3L150R12W2H3_B11 .
History: SIGC03T60SNC | TT025N120EQ | YGW50N65F1A | VS-GB150LH120N | STGW50HF60SD | STGWA40H65FB
Keywords - VS-ENQ030L120S transistor spec
VS-ENQ030L120S cross reference
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History: SIGC03T60SNC | TT025N120EQ | YGW50N65F1A | VS-GB150LH120N | STGW50HF60SD | STGWA40H65FB
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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