All IGBT. VS-ENQ030L120S Datasheet

 

VS-ENQ030L120S IGBT. Datasheet pdf. Equivalent


   Type Designator: VS-ENQ030L120S
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 121 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.12 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 39 nS
   Coesⓘ - Output Capacitance, typ: 124 pF
   Qgⓘ - Total Gate Charge, typ: 157 nC
   Package: MODULE

 VS-ENQ030L120S Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

VS-ENQ030L120S Datasheet (PDF)

 ..1. Size:314K  vishay
 vs-enq030l120s.pdf

VS-ENQ030L120S VS-ENQ030L120S

VS-ENQ030L120Swww.vishay.comVishay SemiconductorsEMIPAK-1B PressFit Power Module Neutral Point Clamp Topology, 30 AFEATURES Ultrafast Trench IGBT technology HEXFRED and silicon carbide diode technology PressFit pins technology Exposed Al2O3 substrate with low thermal resistance Low internal inductances UL approved file E78996 EMIPAK-1B Material c

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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