VS-ETF075Y60U IGBT. Datasheet pdf. Equivalent
Type Designator: VS-ETF075Y60U
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 186 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.1 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 72 nS
Coesⓘ - Output Capacitance, typ: 245 pF
Qgⓘ - Total Gate Charge, typ: 150 nC
Package: MODULE
VS-ETF075Y60U Transistor Equivalent Substitute - IGBT Cross-Reference Search
VS-ETF075Y60U Datasheet (PDF)
vs-etf075y60u.pdf
VS-ETF075Y60Uwww.vishay.comVishay SemiconductorsEMIPAK-2B PressFit Power Module Three Levels Half-Bridge Inverter Stage, 75 AFEATURES Trench IGBT technology FRED Pt clamping diodes PressFit pins technology Exposed Al2O3 substrate with low thermal resistance Short circuit rated Square RBSOA Integrated thermistor Low internal inductancesEMIPA
vs-etl015y120h.pdf
VS-ETL015Y120Hwww.vishay.comVishay SemiconductorsEMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 AFEATURES Trench IGBT technology HEXFRED clamping diode technology Rectifier bypass diode PressFit pins technology Exposed Al2O3 substrate with low thermal resistance Integrated thermistor 10 s short circuit capability Squar
Datasheet: VS-GB90DA120U , VS-GB90DA60U , VS-GB90SA120U , VS-GP100TS60SFPBF , VS-GP250SA60S , VS-GP300TD60S , VS-GP400TD60S , VS-ENQ030L120S , MBQ40T65FDSC , VS-ETL015Y120H , F12-25R12KT4G , F12-35R12KT4G , F3L100R07W2E3_B11 , F3L100R12W2H3_B11 , F3L150R07W2E3_B11 , F3L150R12W2H3_B11 , F3L15R12W2H3_B27 .
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