VS-ETF075Y60U Specs and Replacement
Type Designator: VS-ETF075Y60U
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 186 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 72 nS
Coesⓘ - Output Capacitance, typ: 245 pF
Package: MODULE VS-ETF075Y60U Substitution - IGBT ⓘ Cross-Reference Search
VS-ETF075Y60U datasheet
vs-etf075y60u.pdf
VS-ETF075Y60U www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Three Levels Half-Bridge Inverter Stage, 75 A FEATURES Trench IGBT technology FRED Pt clamping diodes PressFit pins technology Exposed Al2O3 substrate with low thermal resistance Short circuit rated Square RBSOA Integrated thermistor Low internal inductances EMIPA... See More ⇒
vs-etl015y120h.pdf
VS-ETL015Y120H www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A FEATURES Trench IGBT technology HEXFRED clamping diode technology Rectifier bypass diode PressFit pins technology Exposed Al2O3 substrate with low thermal resistance Integrated thermistor 10 s short circuit capability Squar... See More ⇒
Specs: VS-GB90DA120U , VS-GB90DA60U , VS-GB90SA120U , VS-GP100TS60SFPBF , VS-GP250SA60S , VS-GP300TD60S , VS-GP400TD60S , VS-ENQ030L120S , RJH60F5DPQ-A0 , VS-ETL015Y120H , F12-25R12KT4G , F12-35R12KT4G , F3L100R07W2E3_B11 , F3L100R12W2H3_B11 , F3L150R07W2E3_B11 , F3L150R12W2H3_B11 , F3L15R12W2H3_B27 .
History: STGWT40H60DLFB
Keywords - VS-ETF075Y60U transistor spec
VS-ETF075Y60U cross reference
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History: STGWT40H60DLFB
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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