All IGBT. VS-ETF075Y60U Datasheet

 

VS-ETF075Y60U Datasheet and Replacement


   Type Designator: VS-ETF075Y60U
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 186 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 72 nS
   Coesⓘ - Output Capacitance, typ: 245 pF
   Package: MODULE
      - IGBT Cross-Reference

 

VS-ETF075Y60U Datasheet (PDF)

 ..1. Size:3154K  vishay
 vs-etf075y60u.pdf pdf_icon

VS-ETF075Y60U

VS-ETF075Y60Uwww.vishay.comVishay SemiconductorsEMIPAK-2B PressFit Power Module Three Levels Half-Bridge Inverter Stage, 75 AFEATURES Trench IGBT technology FRED Pt clamping diodes PressFit pins technology Exposed Al2O3 substrate with low thermal resistance Short circuit rated Square RBSOA Integrated thermistor Low internal inductancesEMIPA

 9.1. Size:343K  vishay
 vs-etl015y120h.pdf pdf_icon

VS-ETF075Y60U

VS-ETL015Y120Hwww.vishay.comVishay SemiconductorsEMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 AFEATURES Trench IGBT technology HEXFRED clamping diode technology Rectifier bypass diode PressFit pins technology Exposed Al2O3 substrate with low thermal resistance Integrated thermistor 10 s short circuit capability Squar

Datasheet: VS-GB90DA120U , VS-GB90DA60U , VS-GB90SA120U , VS-GP100TS60SFPBF , VS-GP250SA60S , VS-GP300TD60S , VS-GP400TD60S , VS-ENQ030L120S , FGH75T65UPD , VS-ETL015Y120H , F12-25R12KT4G , F12-35R12KT4G , F3L100R07W2E3_B11 , F3L100R12W2H3_B11 , F3L150R07W2E3_B11 , F3L150R12W2H3_B11 , F3L15R12W2H3_B27 .

History: AOTF15B65MQ1

Keywords - VS-ETF075Y60U transistor datasheet

 VS-ETF075Y60U cross reference
 VS-ETF075Y60U equivalent finder
 VS-ETF075Y60U lookup
 VS-ETF075Y60U substitution
 VS-ETF075Y60U replacement

 

 
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