VS-ETL015Y120H Specs and Replacement
Type Designator: VS-ETL015Y120H
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 50 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.61 V @25℃
tr ⓘ - Rise Time, typ: 22 nS
Coesⓘ - Output Capacitance, typ: 63 pF
Package: MODULE VS-ETL015Y120H Substitution - IGBT ⓘ Cross-Reference Search
VS-ETL015Y120H datasheet
vs-etl015y120h.pdf
VS-ETL015Y120H www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A FEATURES Trench IGBT technology HEXFRED clamping diode technology Rectifier bypass diode PressFit pins technology Exposed Al2O3 substrate with low thermal resistance Integrated thermistor 10 s short circuit capability Squar... See More ⇒
vs-etf075y60u.pdf
VS-ETF075Y60U www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Three Levels Half-Bridge Inverter Stage, 75 A FEATURES Trench IGBT technology FRED Pt clamping diodes PressFit pins technology Exposed Al2O3 substrate with low thermal resistance Short circuit rated Square RBSOA Integrated thermistor Low internal inductances EMIPA... See More ⇒
Specs: VS-GB90DA60U , VS-GB90SA120U , VS-GP100TS60SFPBF , VS-GP250SA60S , VS-GP300TD60S , VS-GP400TD60S , VS-ENQ030L120S , VS-ETF075Y60U , MBQ40T65FDSC , F12-25R12KT4G , F12-35R12KT4G , F3L100R07W2E3_B11 , F3L100R12W2H3_B11 , F3L150R07W2E3_B11 , F3L150R12W2H3_B11 , F3L15R12W2H3_B27 , F3L200R07PE4 .
Keywords - VS-ETL015Y120H transistor spec
VS-ETL015Y120H cross reference
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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