All IGBT. VS-ETL015Y120H Datasheet

 

VS-ETL015Y120H Datasheet and Replacement


   Type Designator: VS-ETL015Y120H
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 50 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.61 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 22 nS
   Coesⓘ - Output Capacitance, typ: 63 pF
   Package: MODULE
 

 VS-ETL015Y120H substitution

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VS-ETL015Y120H Datasheet (PDF)

 ..1. Size:343K  vishay
 vs-etl015y120h.pdf pdf_icon

VS-ETL015Y120H

VS-ETL015Y120Hwww.vishay.comVishay SemiconductorsEMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 AFEATURES Trench IGBT technology HEXFRED clamping diode technology Rectifier bypass diode PressFit pins technology Exposed Al2O3 substrate with low thermal resistance Integrated thermistor 10 s short circuit capability Squar

 9.1. Size:3154K  vishay
 vs-etf075y60u.pdf pdf_icon

VS-ETL015Y120H

VS-ETF075Y60Uwww.vishay.comVishay SemiconductorsEMIPAK-2B PressFit Power Module Three Levels Half-Bridge Inverter Stage, 75 AFEATURES Trench IGBT technology FRED Pt clamping diodes PressFit pins technology Exposed Al2O3 substrate with low thermal resistance Short circuit rated Square RBSOA Integrated thermistor Low internal inductancesEMIPA

Datasheet: VS-GB90DA60U , VS-GB90SA120U , VS-GP100TS60SFPBF , VS-GP250SA60S , VS-GP300TD60S , VS-GP400TD60S , VS-ENQ030L120S , VS-ETF075Y60U , SGT60U65FD1PT , F12-25R12KT4G , F12-35R12KT4G , F3L100R07W2E3_B11 , F3L100R12W2H3_B11 , F3L150R07W2E3_B11 , F3L150R12W2H3_B11 , F3L15R12W2H3_B27 , F3L200R07PE4 .

History: IXGT40N60C2D1

Keywords - VS-ETL015Y120H transistor datasheet

 VS-ETL015Y120H cross reference
 VS-ETL015Y120H equivalent finder
 VS-ETL015Y120H lookup
 VS-ETL015Y120H substitution
 VS-ETL015Y120H replacement

 

 
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