F12-25R12KT4G Specs and Replacement
Type Designator: F12-25R12KT4G
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 160 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 25 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
Package: MODULE F12-25R12KT4G Substitution - IGBT ⓘ Cross-Reference Search
F12-25R12KT4G datasheet
f12-25r12kt4g.pdf
Technische Information / Technical Information IGBT-Module F12-25R12KT4G IGBT-modules EconoPACK 3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EconoPACK 3 module with trench/fieldstop IGBT4 and Emitter Controlled4 Diode Vorl ufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data H chstzul ssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspa... See More ⇒
Specs: VS-GB90SA120U , VS-GP100TS60SFPBF , VS-GP250SA60S , VS-GP300TD60S , VS-GP400TD60S , VS-ENQ030L120S , VS-ETF075Y60U , VS-ETL015Y120H , SGT40N60FD2PT , F12-35R12KT4G , F3L100R07W2E3_B11 , F3L100R12W2H3_B11 , F3L150R07W2E3_B11 , F3L150R12W2H3_B11 , F3L15R12W2H3_B27 , F3L200R07PE4 , F3L200R12W2H3_B11 .
History: JT075N120GPED | STGW15S120DF3 | KGF20N60PA | SPM1003 | STGW30H65FB | IXSX40N60BD1 | GT50J325
Keywords - F12-25R12KT4G transistor spec
F12-25R12KT4G cross reference
F12-25R12KT4G equivalent finder
F12-25R12KT4G lookup
F12-25R12KT4G substitution
F12-25R12KT4G replacement
History: JT075N120GPED | STGW15S120DF3 | KGF20N60PA | SPM1003 | STGW30H65FB | IXSX40N60BD1 | GT50J325
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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