F12-35R12KT4G Specs and Replacement
Type Designator: F12-35R12KT4G
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 210 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 35 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
Package: MODULE F12-35R12KT4G Substitution - IGBT ⓘ Cross-Reference Search
F12-35R12KT4G datasheet
Specs: VS-GP100TS60SFPBF , VS-GP250SA60S , VS-GP300TD60S , VS-GP400TD60S , VS-ENQ030L120S , VS-ETF075Y60U , VS-ETL015Y120H , F12-25R12KT4G , STGW60V60DF , F3L100R07W2E3_B11 , F3L100R12W2H3_B11 , F3L150R07W2E3_B11 , F3L150R12W2H3_B11 , F3L15R12W2H3_B27 , F3L200R07PE4 , F3L200R12W2H3_B11 , F3L300R12ME4_B22 .
History: HIA30N140IH-DA | ISL9V5045S3ST-F085
Keywords - F12-35R12KT4G transistor spec
F12-35R12KT4G cross reference
F12-35R12KT4G equivalent finder
F12-35R12KT4G lookup
F12-35R12KT4G substitution
F12-35R12KT4G replacement
History: HIA30N140IH-DA | ISL9V5045S3ST-F085
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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