All IGBT. F12-35R12KT4G Datasheet

 

F12-35R12KT4G IGBT. Datasheet pdf. Equivalent


   Type Designator: F12-35R12KT4G
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 210 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 35 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 30 nS
   Package: MODULE

 F12-35R12KT4G Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

F12-35R12KT4G Datasheet (PDF)

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 f12-35r12kt4g.pdf

F12-35R12KT4G F12-35R12KT4G

/ Technical InformationIGBT-F12-35R12KT4GIGBT-modulesEconoPACK3 Modul mit Trench/Feldstopp IGBT4 und EmCon4 Diode EconoPACK3 module with trench/fieldstop IGBT4 and EmCon4 diode IGBT- / IGBT,Inverter / Preliminary Data / Maximum Rated Values

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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