All IGBT. F12-35R12KT4G Datasheet

 

F12-35R12KT4G Datasheet and Replacement


   Type Designator: F12-35R12KT4G
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 210 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 35 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 30 nS
   Package: MODULE
 

 F12-35R12KT4G substitution

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F12-35R12KT4G Datasheet (PDF)

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F12-35R12KT4G

/ Technical InformationIGBT-F12-35R12KT4GIGBT-modulesEconoPACK3 Modul mit Trench/Feldstopp IGBT4 und EmCon4 Diode EconoPACK3 module with trench/fieldstop IGBT4 and EmCon4 diode IGBT- / IGBT,Inverter / Preliminary Data / Maximum Rated Values

Datasheet: VS-GP100TS60SFPBF , VS-GP250SA60S , VS-GP300TD60S , VS-GP400TD60S , VS-ENQ030L120S , VS-ETF075Y60U , VS-ETL015Y120H , F12-25R12KT4G , MBQ40T65FDSC , F3L100R07W2E3_B11 , F3L100R12W2H3_B11 , F3L150R07W2E3_B11 , F3L150R12W2H3_B11 , F3L15R12W2H3_B27 , F3L200R07PE4 , F3L200R12W2H3_B11 , F3L300R12ME4_B22 .

History: TT060U065FB | CM200DY-28H | CM200DY-12NF | CM1200HA-34H | IRG4IBC30UD | STGP20H60DF | CM150DY-12NF

Keywords - F12-35R12KT4G transistor datasheet

 F12-35R12KT4G cross reference
 F12-35R12KT4G equivalent finder
 F12-35R12KT4G lookup
 F12-35R12KT4G substitution
 F12-35R12KT4G replacement

 

 
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