F3L400R07ME4_B22 Specs and Replacement
Type Designator: F3L400R07ME4_B22
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 1150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 400 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
Package: MODULE F3L400R07ME4_B22 Substitution - IGBTⓘ Cross-Reference Search
F3L400R07ME4_B22 datasheet
f3l400r07me4 b22.pdf
/ Technical Information IGBT- F3L400R07ME4_B22 IGBT-modules EconoDUAL 3 / IGBT4 and diode and NTC EconoDUAL 3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTC V = 650V CES I = 400A / I = 80... See More ⇒
f3l400r07me4 b23.pdf
/ Technical Information IGBT- F3L400R07ME4_B23 IGBT-modules EconoDUAL 3 / IGBT4 and diode and NTC EconoDUAL 3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTC V = 650V CES I = 400A / I = 80... See More ⇒
Specs: F3L15R12W2H3_B27, F3L200R07PE4, F3L200R12W2H3_B11, F3L300R12ME4_B22, F3L300R12ME4_B23, F3L300R12MT4_B22, F3L300R12MT4_B23, F3L300R12PT4_B26, TGAN40N60FD, F3L400R07ME4_B23, F3L400R07PE4_B26, F3L400R12PT4_B26, F3L75R07W2E3_B11, F3L75R12W1H3_B27, F3L80R12W1H3_B11, F4-100R06KL4, F4-100R12KS4
Keywords - F3L400R07ME4_B22 transistor spec
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History: SGS23N60UFD | AIKB20N60CT
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