All IGBT. F3L75R07W2E3_B11 Datasheet

 

F3L75R07W2E3_B11 Datasheet and Replacement


   Type Designator: F3L75R07W2E3_B11
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 20 nS
   Package: MODULE
 

 F3L75R07W2E3_B11 substitution

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F3L75R07W2E3_B11 Datasheet (PDF)

 0.1. Size:764K  infineon
 f3l75r07w2e3 b11.pdf pdf_icon

F3L75R07W2E3_B11

Technische Information / Technical InformationIGBT-ModuleF3L75R07W2E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 650VCESI = 75A / I = 150AC nom CRMTypische Anwendungen Typical

 2.1. Size:816K  infineon
 f3l75r07w2e3-b11.pdf pdf_icon

F3L75R07W2E3_B11

Technische Information / Technical InformationIGBT-ModuleF3L75R07W2E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 650VCESI = 75A / I = 150AC nom CRMTypische Anwendungen Typical

 8.1. Size:1078K  infineon
 f3l75r12w1h3-b27.pdf pdf_icon

F3L75R07W2E3_B11

Technische Information / Technical InformationIGBT-ModulF3L75R12W1H3_B27IGBT-ModuleV = 1200VCESI = 75A / I = 150AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-level-applications Solar Anwendungen Solar applicationsElektrische Eigenschaften Electrical Features High Speed IGBT H3 High speed IGBT H3 Niederinduktives

 8.2. Size:1076K  infineon
 f3l75r12w1h3-b11.pdf pdf_icon

F3L75R07W2E3_B11

Technische Information / Technical InformationIGBT-ModulF3L75R12W1H3_B11IGBT-ModuleVorlufige Daten / Preliminary DataV = 1200VCESI = 75A / I = 150AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Solar Anwendungen Solar ApplicationsElektrische Eigenschaften Electrical Features Niederinduktives Design

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Datasheet: F3L300R12ME4_B23 , F3L300R12MT4_B22 , F3L300R12MT4_B23 , F3L300R12PT4_B26 , F3L400R07ME4_B22 , F3L400R07ME4_B23 , F3L400R07PE4_B26 , F3L400R12PT4_B26 , IRGP4062D , F3L75R12W1H3_B27 , F3L80R12W1H3_B11 , F4-100R06KL4 , F4-100R12KS4 , F4-150R12KS4 , F4-200R06KL4 , F4-30R06W1E3 , F4-50R06W1E3 .

History: MWI50-06A7T | MWI60-12T6K | CM200DY-12NF | IXGA12N120A3 | IRG4IBC30UD | CM150DY-12NF | IRG4BC20KDPBF

Keywords - F3L75R07W2E3_B11 transistor datasheet

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 F3L75R07W2E3_B11 lookup
 F3L75R07W2E3_B11 substitution
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