All IGBT. F3L75R07W2E3_B11 Datasheet

 

F3L75R07W2E3_B11 Datasheet and Replacement


   Type Designator: F3L75R07W2E3_B11
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 20 nS
   Package: MODULE
 

 F3L75R07W2E3_B11 substitution

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F3L75R07W2E3_B11 Datasheet (PDF)

 0.1. Size:764K  infineon
 f3l75r07w2e3 b11.pdf pdf_icon

F3L75R07W2E3_B11

Technische Information / Technical InformationIGBT-ModuleF3L75R07W2E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 650VCESI = 75A / I = 150AC nom CRMTypische Anwendungen Typical

 2.1. Size:816K  infineon
 f3l75r07w2e3-b11.pdf pdf_icon

F3L75R07W2E3_B11

Technische Information / Technical InformationIGBT-ModuleF3L75R07W2E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 650VCESI = 75A / I = 150AC nom CRMTypische Anwendungen Typical

 8.1. Size:1078K  infineon
 f3l75r12w1h3-b27.pdf pdf_icon

F3L75R07W2E3_B11

Technische Information / Technical InformationIGBT-ModulF3L75R12W1H3_B27IGBT-ModuleV = 1200VCESI = 75A / I = 150AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-level-applications Solar Anwendungen Solar applicationsElektrische Eigenschaften Electrical Features High Speed IGBT H3 High speed IGBT H3 Niederinduktives

 8.2. Size:1076K  infineon
 f3l75r12w1h3-b11.pdf pdf_icon

F3L75R07W2E3_B11

Technische Information / Technical InformationIGBT-ModulF3L75R12W1H3_B11IGBT-ModuleVorlufige Daten / Preliminary DataV = 1200VCESI = 75A / I = 150AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Solar Anwendungen Solar ApplicationsElektrische Eigenschaften Electrical Features Niederinduktives Design

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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: MII145-12A3 | MMG450WB170B

Keywords - F3L75R07W2E3_B11 transistor datasheet

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 F3L75R07W2E3_B11 substitution
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