F3L75R12W1H3_B27 IGBT. Datasheet pdf. Equivalent
Type Designator: F3L75R12W1H3_B27
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 275 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 10 nS
Package: MODULE
F3L75R12W1H3_B27 Transistor Equivalent Substitute - IGBT Cross-Reference Search
F3L75R12W1H3_B27 Datasheet (PDF)
f3l75r12w1h3 b27.pdf
/ Technical InformationIGBT-F3L75R12W1H3_B27IGBT-ModuleV = 1200VCESI = 75A / I = 150AC nom CRM Typical Applications 3-Level-Applications Solar Applications Electrical Features Low Inductive Design Low Switching Losses V
f3l75r12w1h3-b27.pdf
Technische Information / Technical InformationIGBT-ModulF3L75R12W1H3_B27IGBT-ModuleV = 1200VCESI = 75A / I = 150AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-level-applications Solar Anwendungen Solar applicationsElektrische Eigenschaften Electrical Features High Speed IGBT H3 High speed IGBT H3 Niederinduktives
f3l75r12w1h3-b11.pdf
Technische Information / Technical InformationIGBT-ModulF3L75R12W1H3_B11IGBT-ModuleVorlufige Daten / Preliminary DataV = 1200VCESI = 75A / I = 150AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Solar Anwendungen Solar ApplicationsElektrische Eigenschaften Electrical Features Niederinduktives Design
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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