F3L75R12W1H3_B27 PDF and Equivalents Search

 

F3L75R12W1H3_B27 Specs and Replacement

Type Designator: F3L75R12W1H3_B27

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 275 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃

tr ⓘ - Rise Time, typ: 10 nS

Package: MODULE

 F3L75R12W1H3_B27 Substitution

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F3L75R12W1H3_B27 datasheet

 0.1. Size:1355K  infineon
 f3l75r12w1h3 b27.pdf pdf_icon

F3L75R12W1H3_B27

/ Technical Information IGBT- F3L75R12W1H3_B27 IGBT-Module V = 1200V CES I = 75A / I = 150A C nom CRM Typical Applications 3-Level-Applications Solar Applications Electrical Features Low Inductive Design Low Switching Losses V ... See More ⇒

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F3L75R12W1H3_B27

Technische Information / Technical Information IGBT-Modul F3L75R12W1H3_B27 IGBT-Module V = 1200V CES I = 75A / I = 150A C nom CRM Typische Anwendungen Typical Applications 3-Level-Applikationen 3-level-applications Solar Anwendungen Solar applications Elektrische Eigenschaften Electrical Features High Speed IGBT H3 High speed IGBT H3 Niederinduktives... See More ⇒

 2.2. Size:1076K  infineon
 f3l75r12w1h3-b11.pdf pdf_icon

F3L75R12W1H3_B27

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Specs: F3L300R12MT4_B22, F3L300R12MT4_B23, F3L300R12PT4_B26, F3L400R07ME4_B22, F3L400R07ME4_B23, F3L400R07PE4_B26, F3L400R12PT4_B26, F3L75R07W2E3_B11, IRGP4062D, F3L80R12W1H3_B11, F4-100R06KL4, F4-100R12KS4, F4-150R12KS4, F4-200R06KL4, F4-30R06W1E3, F4-50R06W1E3, F4-50R07W2H3_B51

Keywords - F3L75R12W1H3_B27 transistor spec

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