All IGBT. F3L80R12W1H3_B11 Datasheet

 

F3L80R12W1H3_B11 Datasheet and Replacement


   Type Designator: F3L80R12W1H3_B11
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 275 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 30 nS
   Package: MODULE
 

 F3L80R12W1H3_B11 substitution

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F3L80R12W1H3_B11 Datasheet (PDF)

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F3L80R12W1H3_B11

/ Technical InformationIGBT-F3L80R12W1H3_B11IGBT-modulesEasyPACK 2 and PressFIT / NTCEasyPACK module with active Neutral Point Clamp 2 topology and PressFIT / NTC / Preliminary DataV = 1200VCESI = 80A

Datasheet: F3L300R12MT4_B23 , F3L300R12PT4_B26 , F3L400R07ME4_B22 , F3L400R07ME4_B23 , F3L400R07PE4_B26 , F3L400R12PT4_B26 , F3L75R07W2E3_B11 , F3L75R12W1H3_B27 , IRGP4063 , F4-100R06KL4 , F4-100R12KS4 , F4-150R12KS4 , F4-200R06KL4 , F4-30R06W1E3 , F4-50R06W1E3 , F4-50R07W2H3_B51 , F4-50R12KS4 .

History: MIXA20WB1200TMH

Keywords - F3L80R12W1H3_B11 transistor datasheet

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 F3L80R12W1H3_B11 substitution
 F3L80R12W1H3_B11 replacement

 

 
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