F3L80R12W1H3_B11 Datasheet and Replacement
Type Designator: F3L80R12W1H3_B11
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 275 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 30 nS
Package: MODULE
F3L80R12W1H3_B11 substitution
F3L80R12W1H3_B11 Datasheet (PDF)
f3l80r12w1h3 b11.pdf
/ Technical InformationIGBT-F3L80R12W1H3_B11IGBT-modulesEasyPACK 2 and PressFIT / NTCEasyPACK module with active Neutral Point Clamp 2 topology and PressFIT / NTC / Preliminary DataV = 1200VCESI = 80A
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: CM1600HC-34H
Keywords - F3L80R12W1H3_B11 transistor datasheet
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History: CM1600HC-34H
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