All IGBT. F3L80R12W1H3_B11 Datasheet

 

F3L80R12W1H3_B11 IGBT. Datasheet pdf. Equivalent


   Type Designator: F3L80R12W1H3_B11
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 275 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 30 nS
   Package: MODULE

 F3L80R12W1H3_B11 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

F3L80R12W1H3_B11 Datasheet (PDF)

 0.1. Size:1146K  infineon
 f3l80r12w1h3 b11.pdf

F3L80R12W1H3_B11 F3L80R12W1H3_B11

/ Technical InformationIGBT-F3L80R12W1H3_B11IGBT-modulesEasyPACK 2 and PressFIT / NTCEasyPACK module with active Neutral Point Clamp 2 topology and PressFIT / NTC / Preliminary DataV = 1200VCESI = 80A

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top