F3L80R12W1H3_B11 PDF and Equivalents Search

 

F3L80R12W1H3_B11 Specs and Replacement

Type Designator: F3L80R12W1H3_B11

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 275 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Package: MODULE

 F3L80R12W1H3_B11 Substitution

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F3L80R12W1H3_B11 datasheet

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 f3l80r12w1h3 b11.pdf pdf_icon

F3L80R12W1H3_B11

/ Technical Information IGBT- F3L80R12W1H3_B11 IGBT-modules EasyPACK 2 and PressFIT / NTC EasyPACK module with active Neutral Point Clamp 2 topology and PressFIT / NTC / Preliminary Data V = 1200V CES I = 80A ... See More ⇒

Specs: F3L300R12MT4_B23, F3L300R12PT4_B26, F3L400R07ME4_B22, F3L400R07ME4_B23, F3L400R07PE4_B26, F3L400R12PT4_B26, F3L75R07W2E3_B11, F3L75R12W1H3_B27, GT30F132, F4-100R06KL4, F4-100R12KS4, F4-150R12KS4, F4-200R06KL4, F4-30R06W1E3, F4-50R06W1E3, F4-50R07W2H3_B51, F4-50R12KS4

Keywords - F3L80R12W1H3_B11 transistor spec

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