F4-200R06KL4 Specs and Replacement
Type Designator: F4-200R06KL4
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 695 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
Package: MODULE F4-200R06KL4 Substitution - IGBTⓘ Cross-Reference Search
F4-200R06KL4 datasheet
f4-200r06kl4.pdf
Technische Information / technical information IGBT-Module F4-200R06KL4 IGBT-modules Vorl ufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 600 V collector-emitter voltage Kollektor-Dauergleichstrom T = 45 C I 200 A DC-collector current T = 25 C I 225 A Periodischer Kollekto... See More ⇒
f4-200r17n3e4.pdf
F4-200R17N3E4 EconoPACK 3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTC EconoPACK 3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode and NTC V = 1700V CES I = 200A / I = 400A C nom CRM Typische Anwendungen Typical Applications Hochleistungsumrichter High power converters Mittelspannungsantriebe Medium voltage converters Ele... See More ⇒
Specs: F3L400R07PE4_B26, F3L400R12PT4_B26, F3L75R07W2E3_B11, F3L75R12W1H3_B27, F3L80R12W1H3_B11, F4-100R06KL4, F4-100R12KS4, F4-150R12KS4, GT30F124, F4-30R06W1E3, F4-50R06W1E3, F4-50R07W2H3_B51, F4-50R12KS4, F4-50R12KS4_B11, F4-50R12MS4, F4-75R06W1E3, F4-75R07W2H3_B51
Keywords - F4-200R06KL4 transistor spec
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History: FF200R12KS4
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