All IGBT. F4-200R06KL4 Datasheet

 

F4-200R06KL4 Datasheet and Replacement


   Type Designator: F4-200R06KL4
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 695 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 40 nS
   Package: MODULE
 

 F4-200R06KL4 substitution

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F4-200R06KL4 Datasheet (PDF)

 ..1. Size:335K  eupec
 f4-200r06kl4.pdf pdf_icon

F4-200R06KL4

Technische Information / technical informationIGBT-ModuleF4-200R06KL4IGBT-modulesVorlufige Datenpreliminary dataIGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 600 Vcollector-emitter voltageKollektor-Dauergleichstrom T = 45C I 200 ADC-collector current T = 25C I 225 APeriodischer Kollekto

 7.1. Size:545K  infineon
 f4-200r17n3e4.pdf pdf_icon

F4-200R06KL4

F4-200R17N3E4EconoPACK3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTCEconoPACK3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode and NTC V = 1700VCESI = 200A / I = 400AC nom CRMTypische Anwendungen Typical Applications Hochleistungsumrichter High power converters Mittelspannungsantriebe Medium voltage convertersEle

Datasheet: F3L400R07PE4_B26 , F3L400R12PT4_B26 , F3L75R07W2E3_B11 , F3L75R12W1H3_B27 , F3L80R12W1H3_B11 , F4-100R06KL4 , F4-100R12KS4 , F4-150R12KS4 , GT30F124 , F4-30R06W1E3 , F4-50R06W1E3 , F4-50R07W2H3_B51 , F4-50R12KS4 , F4-50R12KS4_B11 , F4-50R12MS4 , F4-75R06W1E3 , F4-75R07W2H3_B51 .

History: DM2G400SH6A | F4-100R06KL4

Keywords - F4-200R06KL4 transistor datasheet

 F4-200R06KL4 cross reference
 F4-200R06KL4 equivalent finder
 F4-200R06KL4 lookup
 F4-200R06KL4 substitution
 F4-200R06KL4 replacement

 

 
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