F4-200R06KL4 Datasheet and Replacement
Type Designator: F4-200R06KL4
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 695 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 40 nS
Package: MODULE
- IGBT Cross-Reference
F4-200R06KL4 Datasheet (PDF)
f4-200r06kl4.pdf
Technische Information / technical informationIGBT-ModuleF4-200R06KL4IGBT-modulesVorlufige Datenpreliminary dataIGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 600 Vcollector-emitter voltageKollektor-Dauergleichstrom T = 45C I 200 ADC-collector current T = 25C I 225 APeriodischer Kollekto
f4-200r17n3e4.pdf
F4-200R17N3E4EconoPACK3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTCEconoPACK3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode and NTC V = 1700VCESI = 200A / I = 400AC nom CRMTypische Anwendungen Typical Applications Hochleistungsumrichter High power converters Mittelspannungsantriebe Medium voltage convertersEle
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL
Keywords - F4-200R06KL4 transistor datasheet
F4-200R06KL4 cross reference
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History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL
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