F4-75R06W1E3 IGBT. Datasheet pdf. Equivalent
Type Designator: F4-75R06W1E3
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 275 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 17 nS
Package: MODULE
F4-75R06W1E3 Transistor Equivalent Substitute - IGBT Cross-Reference Search
F4-75R06W1E3 Datasheet (PDF)
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f4-75r12ks4-b11.pdf
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Datasheet: F4-150R12KS4 , F4-200R06KL4 , F4-30R06W1E3 , F4-50R06W1E3 , F4-50R07W2H3_B51 , F4-50R12KS4 , F4-50R12KS4_B11 , F4-50R12MS4 , FGPF4536 , F4-75R07W2H3_B51 , F4-75R12KS4 , F4-75R12KS4_B11 , F4-75R12MS4 , FB10R06KL4G , FB15R06KL4B1 , FB15R06W1E3 , FB20R06KL4 .
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