All IGBT. FB10R06KL4G Datasheet

 

FB10R06KL4G Datasheet and Replacement


   Type Designator: FB10R06KL4G
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 69.5 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 10 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 25 nS
   Package: MODULE
 

 FB10R06KL4G substitution

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FB10R06KL4G Datasheet (PDF)

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FB10R06KL4G

Technische Information / technical informationIGBT-ModuleFB10R06KL4GIGBT-modulesIGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 600 Vcollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 10 ADC-collector current T = 25C, T = 150C I 16 APeriodischer Kollektor Spitzenstrom

Datasheet: F4-50R12KS4 , F4-50R12KS4_B11 , F4-50R12MS4 , F4-75R06W1E3 , F4-75R07W2H3_B51 , F4-75R12KS4 , F4-75R12KS4_B11 , F4-75R12MS4 , FGH60N60SMD , FB15R06KL4B1 , FB15R06W1E3 , FB20R06KL4 , FB20R06W1E3 , FB20R06W1E3_B11 , FB30R06W1E3 , FD1000R17IE4 , FD1000R17IE4D_B2 .

History: NCE20TH60BP

Keywords - FB10R06KL4G transistor datasheet

 FB10R06KL4G cross reference
 FB10R06KL4G equivalent finder
 FB10R06KL4G lookup
 FB10R06KL4G substitution
 FB10R06KL4G replacement

 

 
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