FB10R06KL4G Datasheet and Replacement
Type Designator: FB10R06KL4G
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 69.5 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 10 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 25 nS
Package: MODULE
- IGBT Cross-Reference
FB10R06KL4G Datasheet (PDF)
fb10r06kl4g.pdf

Technische Information / technical informationIGBT-ModuleFB10R06KL4GIGBT-modulesIGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 600 Vcollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 10 ADC-collector current T = 25C, T = 150C I 16 APeriodischer Kollektor Spitzenstrom
Datasheet: F4-50R12KS4 , F4-50R12KS4_B11 , F4-50R12MS4 , F4-75R06W1E3 , F4-75R07W2H3_B51 , F4-75R12KS4 , F4-75R12KS4_B11 , F4-75R12MS4 , FGH60N60SMD , FB15R06KL4B1 , FB15R06W1E3 , FB20R06KL4 , FB20R06W1E3 , FB20R06W1E3_B11 , FB30R06W1E3 , FD1000R17IE4 , FD1000R17IE4D_B2 .
History: DM2G150SH6A | IXST35N120B | IXGR40N60C | MSG100D350FHS | DIM800DCS12-A | MSG20T65HPT1 | MSG40T120FQC
Keywords - FB10R06KL4G transistor datasheet
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History: DM2G150SH6A | IXST35N120B | IXGR40N60C | MSG100D350FHS | DIM800DCS12-A | MSG20T65HPT1 | MSG40T120FQC



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