FB15R06KL4B1 Datasheet and Replacement
Type Designator: FB15R06KL4B1
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 60 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 15 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 37 nS
Package: MODULE
- IGBT Cross-Reference
FB15R06KL4B1 Datasheet (PDF)
fb15r06kl4b1.pdf
Technische Information / technical informationIGBT-ModuleFB15R06KL4B1IGBT-ModulesVorlufigpreliminaryElektrische Eigenschaften / electrical propertiesHchstzulssige Werte / maximum rated valuesDiode Gleichrichter/ diode rectifierPeriodische Rckw. SpitzensperrspannungTvj =25C VRRM 800 Vrepetitive peak reverse voltageDurchlastrom Grenzeffektivwert pro ChipTC =
fb15r06w1e3.pdf
/ Technical InformationIGBT-FB15R06W1E3IGBT-modulesEasyPIM /IGBT3 NTCEasyPIM module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC / Preliminary DataV = 600VCESI = 15A / I = 30AC nom CRM Typical Applications
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: SIP30N60G21B | MMG75SR120UZA | IGB30N60T | F3L75R07W2E3_B11 | STGB10M65DF2 | CT20ASL-8 | HGTP10N120BN
Keywords - FB15R06KL4B1 transistor datasheet
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History: SIP30N60G21B | MMG75SR120UZA | IGB30N60T | F3L75R07W2E3_B11 | STGB10M65DF2 | CT20ASL-8 | HGTP10N120BN
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