FB15R06KL4B1 PDF and Equivalents Search

 

FB15R06KL4B1 Specs and Replacement

Type Designator: FB15R06KL4B1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 60 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 15 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃

tr ⓘ - Rise Time, typ: 37 nS

Package: MODULE

 FB15R06KL4B1 Substitution

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FB15R06KL4B1 datasheet

 ..1. Size:312K  eupec
 fb15r06kl4b1.pdf pdf_icon

FB15R06KL4B1

Technische Information / technical information IGBT-Module FB15R06KL4B1 IGBT-Modules Vorl ufig preliminary Elektrische Eigenschaften / electrical properties H chstzul ssige Werte / maximum rated values Diode Gleichrichter/ diode rectifier Periodische R ckw. Spitzensperrspannung Tvj =25 C VRRM 800 V repetitive peak reverse voltage Durchla strom Grenzeffektivwert pro Chip TC =... See More ⇒

 7.1. Size:1096K  infineon
 fb15r06w1e3.pdf pdf_icon

FB15R06KL4B1

/ Technical Information IGBT- FB15R06W1E3 IGBT-modules EasyPIM / IGBT3 NTC EasyPIM module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC / Preliminary Data V = 600V CES I = 15A / I = 30A C nom CRM Typical Applications ... See More ⇒

Specs: F4-50R12KS4_B11 , F4-50R12MS4 , F4-75R06W1E3 , F4-75R07W2H3_B51 , F4-75R12KS4 , F4-75R12KS4_B11 , F4-75R12MS4 , FB10R06KL4G , SGT50T65FD1PT , FB15R06W1E3 , FB20R06KL4 , FB20R06W1E3 , FB20R06W1E3_B11 , FB30R06W1E3 , FD1000R17IE4 , FD1000R17IE4D_B2 , FD1000R33HE3-K .

History: FD1400R12IP4D

Keywords - FB15R06KL4B1 transistor spec

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