All IGBT. FB15R06KL4B1 Datasheet

 

FB15R06KL4B1 Datasheet and Replacement


   Type Designator: FB15R06KL4B1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 60 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 37 nS
   Package: MODULE
 

 FB15R06KL4B1 substitution

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FB15R06KL4B1 Datasheet (PDF)

 ..1. Size:312K  eupec
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FB15R06KL4B1

Technische Information / technical informationIGBT-ModuleFB15R06KL4B1IGBT-ModulesVorlufigpreliminaryElektrische Eigenschaften / electrical propertiesHchstzulssige Werte / maximum rated valuesDiode Gleichrichter/ diode rectifierPeriodische Rckw. SpitzensperrspannungTvj =25C VRRM 800 Vrepetitive peak reverse voltageDurchlastrom Grenzeffektivwert pro ChipTC =

 7.1. Size:1096K  infineon
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FB15R06KL4B1

/ Technical InformationIGBT-FB15R06W1E3IGBT-modulesEasyPIM /IGBT3 NTCEasyPIM module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC / Preliminary DataV = 600VCESI = 15A / I = 30AC nom CRM Typical Applications

Datasheet: F4-50R12KS4_B11 , F4-50R12MS4 , F4-75R06W1E3 , F4-75R07W2H3_B51 , F4-75R12KS4 , F4-75R12KS4_B11 , F4-75R12MS4 , FB10R06KL4G , SGT50T65FD1PT , FB15R06W1E3 , FB20R06KL4 , FB20R06W1E3 , FB20R06W1E3_B11 , FB30R06W1E3 , FD1000R17IE4 , FD1000R17IE4D_B2 , FD1000R33HE3-K .

History: IXGT28N60BD1

Keywords - FB15R06KL4B1 transistor datasheet

 FB15R06KL4B1 cross reference
 FB15R06KL4B1 equivalent finder
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 FB15R06KL4B1 substitution
 FB15R06KL4B1 replacement

 

 
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