FB15R06W1E3 Specs and Replacement
Type Designator: FB15R06W1E3
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 81 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
Package: MODULE FB15R06W1E3 Substitution - IGBT ⓘ Cross-Reference Search
FB15R06W1E3 datasheet
fb15r06w1e3.pdf
/ Technical Information IGBT- FB15R06W1E3 IGBT-modules EasyPIM / IGBT3 NTC EasyPIM module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC / Preliminary Data V = 600V CES I = 15A / I = 30A C nom CRM Typical Applications ... See More ⇒
fb15r06kl4b1.pdf
Technische Information / technical information IGBT-Module FB15R06KL4B1 IGBT-Modules Vorl ufig preliminary Elektrische Eigenschaften / electrical properties H chstzul ssige Werte / maximum rated values Diode Gleichrichter/ diode rectifier Periodische R ckw. Spitzensperrspannung Tvj =25 C VRRM 800 V repetitive peak reverse voltage Durchla strom Grenzeffektivwert pro Chip TC =... See More ⇒
Specs: F4-50R12MS4 , F4-75R06W1E3 , F4-75R07W2H3_B51 , F4-75R12KS4 , F4-75R12KS4_B11 , F4-75R12MS4 , FB10R06KL4G , FB15R06KL4B1 , FGA25N120ANTD , FB20R06KL4 , FB20R06W1E3 , FB20R06W1E3_B11 , FB30R06W1E3 , FD1000R17IE4 , FD1000R17IE4D_B2 , FD1000R33HE3-K , FD1000R33HL3-K .
Keywords - FB15R06W1E3 transistor spec
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