All IGBT. FB20R06W1E3 Datasheet

 

FB20R06W1E3 IGBT. Datasheet pdf. Equivalent


   Type Designator: FB20R06W1E3
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 94 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 13 nS
   Package: MODULE

 FB20R06W1E3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FB20R06W1E3 Datasheet (PDF)

 ..1. Size:1176K  infineon
 fb20r06w1e3 b11.pdf

FB20R06W1E3 FB20R06W1E3

/ Technical InformationIGBT-FB20R06W1E3_B11IGBT-modulesEasyPIM /IGBT3 NTCEasyPIM module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTCV = 600VCESI = 20A / I = 40AC nom CRM Typical Applications Auxiliar

 ..2. Size:904K  infineon
 fb20r06w1e3.pdf

FB20R06W1E3 FB20R06W1E3

Technische Information / Technical InformationIGBT-ModuleFB20R06W1E3IGBT-modulesEasyPIM Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTCEasyPIM module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTCVorlufige Daten / Preliminary DataV = 600VCESI = 20A / I = 40AC nom CRMTypische Anwendungen Typical Applications Hilfs

 0.1. Size:988K  infineon
 fb20r06w1e3-b11.pdf

FB20R06W1E3 FB20R06W1E3

Technische Information / Technical InformationIGBT-ModuleFB20R06W1E3_B11IGBT-modulesEasyPIM Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTCEasyPIM module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTCV = 600VCESI = 20A / I = 40AC nom CRMTypische Anwendungen Typical Applications Hilfsumrichter Auxiliary Inverters

 7.1. Size:242K  eupec
 fb20r06kl4.pdf

FB20R06W1E3 FB20R06W1E3

Technische Information / Technical InformationIGBT-ModuleFB20R06KL4IGBT-ModulesVorlufigPreliminaryElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungTvj =25C VRRM 800 Vrepetitive peak reverse voltageDurchlastrom Grenzeffektivwert pro ChipTC =80

Datasheet: F4-75R07W2H3_B51 , F4-75R12KS4 , F4-75R12KS4_B11 , F4-75R12MS4 , FB10R06KL4G , FB15R06KL4B1 , FB15R06W1E3 , FB20R06KL4 , RJP30H1DPD , FB20R06W1E3_B11 , FB30R06W1E3 , FD1000R17IE4 , FD1000R17IE4D_B2 , FD1000R33HE3-K , FD1000R33HL3-K , FD1200R17KE3-K , FD1200R17KE3-K_B2 .

 

 
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