All IGBT. FB30R06W1E3 Datasheet

 

FB30R06W1E3 Datasheet and Replacement


   Type Designator: FB30R06W1E3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 115 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 16 nS
   Package: MODULE
      - IGBT Cross-Reference

 

FB30R06W1E3 Datasheet (PDF)

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FB30R06W1E3

Technische Information / Technical InformationIGBT-ModuleFB30R06W1E3IGBT-modulesEasyPIM Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTCEasyPIM module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTCVorlufige Daten / Preliminary DataV = 600VCESI = 30A / I = 60AC nom CRMTypische Anwendungen Typical Applications Hilfs

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: CM400C1Y-24S | SIW100N65G2P2D | APT40GP90J | NCE15TD135LP | APT40GP90JDF2 | DIM800DCM17-A | FD400R33KF2C

Keywords - FB30R06W1E3 transistor datasheet

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