All IGBT. FB30R06W1E3 Datasheet

 

FB30R06W1E3 Datasheet and Replacement


   Type Designator: FB30R06W1E3
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 115 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 16 nS
   Package: MODULE
 

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FB30R06W1E3 Datasheet (PDF)

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FB30R06W1E3

Technische Information / Technical InformationIGBT-ModuleFB30R06W1E3IGBT-modulesEasyPIM Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTCEasyPIM module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTCVorlufige Daten / Preliminary DataV = 600VCESI = 30A / I = 60AC nom CRMTypische Anwendungen Typical Applications Hilfs

Datasheet: F4-75R12KS4_B11 , F4-75R12MS4 , FB10R06KL4G , FB15R06KL4B1 , FB15R06W1E3 , FB20R06KL4 , FB20R06W1E3 , FB20R06W1E3_B11 , CRG40T60AN3H , FD1000R17IE4 , FD1000R17IE4D_B2 , FD1000R33HE3-K , FD1000R33HL3-K , FD1200R17KE3-K , FD1200R17KE3-K_B2 , FD1400R12IP4D , FD200R12KE3 .

History: FD1000R33HL3-K | IXBF15N300C

Keywords - FB30R06W1E3 transistor datasheet

 FB30R06W1E3 cross reference
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 FB30R06W1E3 replacement

 

 
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