FB30R06W1E3 Specs and Replacement
Type Designator: FB30R06W1E3
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 115 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
Package: MODULE FB30R06W1E3 Substitution - IGBT ⓘ Cross-Reference Search
FB30R06W1E3 datasheet
fb30r06w1e3.pdf
Technische Information / Technical Information IGBT-Module FB30R06W1E3 IGBT-modules EasyPIM Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC EasyPIM module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC Vorl ufige Daten / Preliminary Data V = 600V CES I = 30A / I = 60A C nom CRM Typische Anwendungen Typical Applications Hilfs... See More ⇒
Specs: F4-75R12KS4_B11 , F4-75R12MS4 , FB10R06KL4G , FB15R06KL4B1 , FB15R06W1E3 , FB20R06KL4 , FB20R06W1E3 , FB20R06W1E3_B11 , CRG60T60AN3H , FD1000R17IE4 , FD1000R17IE4D_B2 , FD1000R33HE3-K , FD1000R33HL3-K , FD1200R17KE3-K , FD1200R17KE3-K_B2 , FD1400R12IP4D , FD200R12KE3 .
History: F4-50R07W2H3_B51 | F4-50R12KS4
Keywords - FB30R06W1E3 transistor spec
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History: F4-50R07W2H3_B51 | F4-50R12KS4
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