FD1400R12IP4D Datasheet and Replacement
Type Designator: FD1400R12IP4D
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 7700 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 1400 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 120 nS
Package: MODULE
- IGBT Cross-Reference
FD1400R12IP4D Datasheet (PDF)
fd1400r12ip4d.pdf
Technische Information / Technical InformationIGBT-ModuleFD1400R12IP4DIGBT-modulesPrimePACK3 Modul mit Trench/Feldstopp IGBT4, grerer Emitter Controlled 4 DiodePrimePACK3 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diodeVorlufige Daten / Preliminary DataV = 1200VCESI = 1400A / I = 2800AC nom CRMTypische Anwendungen Typical Applications
cfd1408.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN POWER TRANSISTOR CFD1408TO-220FP Fully IsolatedPlastic PackageBCEPower Amplifier ApplicationsComplements CFB1017ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 80 VVCEOCollector Emitter Voltage 80 VVE
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: MMG300D120B6TC
Keywords - FD1400R12IP4D transistor datasheet
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History: MMG300D120B6TC
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