All IGBT. FD1400R12IP4D Datasheet

 

FD1400R12IP4D Datasheet and Replacement


   Type Designator: FD1400R12IP4D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 7700 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 1400 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 120 nS
   Package: MODULE
 

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FD1400R12IP4D Datasheet (PDF)

 ..1. Size:702K  infineon
 fd1400r12ip4d.pdf pdf_icon

FD1400R12IP4D

Technische Information / Technical InformationIGBT-ModuleFD1400R12IP4DIGBT-modulesPrimePACK3 Modul mit Trench/Feldstopp IGBT4, grerer Emitter Controlled 4 DiodePrimePACK3 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diodeVorlufige Daten / Preliminary DataV = 1200VCESI = 1400A / I = 2800AC nom CRMTypische Anwendungen Typical Applications

 9.1. Size:82K  cdil
 cfd1408.pdf pdf_icon

FD1400R12IP4D

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN POWER TRANSISTOR CFD1408TO-220FP Fully IsolatedPlastic PackageBCEPower Amplifier ApplicationsComplements CFB1017ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 80 VVCEOCollector Emitter Voltage 80 VVE

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: NCE25TD135LT

Keywords - FD1400R12IP4D transistor datasheet

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