FD1400R12IP4D Datasheet and Replacement
Type Designator: FD1400R12IP4D
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 7700 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 1400 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 120 nS
Package: MODULE
FD1400R12IP4D substitution
FD1400R12IP4D Datasheet (PDF)
fd1400r12ip4d.pdf
Technische Information / Technical InformationIGBT-ModuleFD1400R12IP4DIGBT-modulesPrimePACK3 Modul mit Trench/Feldstopp IGBT4, grerer Emitter Controlled 4 DiodePrimePACK3 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diodeVorlufige Daten / Preliminary DataV = 1200VCESI = 1400A / I = 2800AC nom CRMTypische Anwendungen Typical Applications
cfd1408.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN POWER TRANSISTOR CFD1408TO-220FP Fully IsolatedPlastic PackageBCEPower Amplifier ApplicationsComplements CFB1017ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 80 VVCEOCollector Emitter Voltage 80 VVE
Datasheet: FB20R06W1E3_B11 , FB30R06W1E3 , FD1000R17IE4 , FD1000R17IE4D_B2 , FD1000R33HE3-K , FD1000R33HL3-K , FD1200R17KE3-K , FD1200R17KE3-K_B2 , FGA60N65SMD , FD200R12KE3 , FD200R12PT4_B6 , FD250R65KE3-K , FD300R06KE3 , FD300R07PE4_B6 , FD300R12KE3 , FD300R12KS4 , FD300R12KS4_B5 .
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