All IGBT. FD200R12PT4_B6 Datasheet

 

FD200R12PT4_B6 Datasheet and Replacement


   Type Designator: FD200R12PT4_B6
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 37 nS
   Package: MODULE
      - IGBT Cross-Reference

 

FD200R12PT4_B6 Datasheet (PDF)

 ..1. Size:783K  infineon
fd200r12pt4 b6.pdf pdf_icon

FD200R12PT4_B6

Technische Information / Technical InformationIGBT-ModuleFD200R12PT4_B6IGBT-modulesEconoPACK4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTCEconoPACK4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCV = 1200VCESI = 200A / I = 400AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Appli

 3.1. Size:828K  infineon
fd200r12pt4-b6.pdf pdf_icon

FD200R12PT4_B6

Technische Information / Technical InformationIGBT-ModuleFD200R12PT4_B6IGBT-modulesEconoPACK4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTCEconoPACK4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCV = 1200VCESI = 200A / I = 400AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Appli

 6.1. Size:455K  infineon
fd200r12ke3.pdf pdf_icon

FD200R12PT4_B6

Technische Information / Technical InformationIGBT-ModuleFD200R12KE3IGBT-modules62mm C-Serien Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled High Efficiency Diode 62mm C-series module with trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode IGBT, Brems-Chopper / IGBT, Brake-ChopperHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sperrspann

 6.2. Size:589K  infineon
fd200r12ke3p.pdf pdf_icon

FD200R12PT4_B6

Technische Information / Technical InformationIGBT-ModulFD200R12KE3PIGBT-Module62mm C-Serien Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled HE Diode und bereitsaufgetragenem Thermal Interface Material62mm C-Series module with Trench/Fieldstop IGBT3 and Emitter Controlled HE diode and pre-appliedThermal Interface MaterialVorlufige Daten / Preliminary DataV = 1200VC

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

Keywords - FD200R12PT4_B6 transistor datasheet

 FD200R12PT4_B6 cross reference
 FD200R12PT4_B6 equivalent finder
 FD200R12PT4_B6 lookup
 FD200R12PT4_B6 substitution
 FD200R12PT4_B6 replacement

 

 
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