All IGBT. FD200R12PT4_B6 Datasheet

 

FD200R12PT4_B6 IGBT. Datasheet pdf. Equivalent


   Type Designator: FD200R12PT4_B6
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 37 nS
   Package: MODULE

 FD200R12PT4_B6 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FD200R12PT4_B6 Datasheet (PDF)

 ..1. Size:783K  infineon
 fd200r12pt4 b6.pdf

FD200R12PT4_B6 FD200R12PT4_B6

Technische Information / Technical InformationIGBT-ModuleFD200R12PT4_B6IGBT-modulesEconoPACK4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTCEconoPACK4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCV = 1200VCESI = 200A / I = 400AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Appli

 3.1. Size:828K  infineon
 fd200r12pt4-b6.pdf

FD200R12PT4_B6 FD200R12PT4_B6

Technische Information / Technical InformationIGBT-ModuleFD200R12PT4_B6IGBT-modulesEconoPACK4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTCEconoPACK4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCV = 1200VCESI = 200A / I = 400AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Appli

 6.1. Size:455K  infineon
 fd200r12ke3.pdf

FD200R12PT4_B6 FD200R12PT4_B6

Technische Information / Technical InformationIGBT-ModuleFD200R12KE3IGBT-modules62mm C-Serien Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled High Efficiency Diode 62mm C-series module with trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode IGBT, Brems-Chopper / IGBT, Brake-ChopperHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sperrspann

 6.2. Size:589K  infineon
 fd200r12ke3p.pdf

FD200R12PT4_B6 FD200R12PT4_B6

Technische Information / Technical InformationIGBT-ModulFD200R12KE3PIGBT-Module62mm C-Serien Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled HE Diode und bereitsaufgetragenem Thermal Interface Material62mm C-Series module with Trench/Fieldstop IGBT3 and Emitter Controlled HE diode and pre-appliedThermal Interface MaterialVorlufige Daten / Preliminary DataV = 1200VC

Datasheet: FD1000R17IE4 , FD1000R17IE4D_B2 , FD1000R33HE3-K , FD1000R33HL3-K , FD1200R17KE3-K , FD1200R17KE3-K_B2 , FD1400R12IP4D , FD200R12KE3 , GT30G124 , FD250R65KE3-K , FD300R06KE3 , FD300R07PE4_B6 , FD300R12KE3 , FD300R12KS4 , FD300R12KS4_B5 , FD400R12KE3_B5 , FD400R33KF2C .

 

 
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