FD250R65KE3-K Datasheet and Replacement
Type Designator: FD250R65KE3-K
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 4800 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 6500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 250 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 330 nS
Package: MODULE
- IGBT Cross-Reference
FD250R65KE3-K Datasheet (PDF)
fd250r65ke3-k.pdf

FD250R65KE3-Khochisolierendes Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diodehighly insulated module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diodeV = 6500VCESI = 250A / I = 500AC nom CRMPotentielle Anwendungen Potential Applications Mittelspannungsantriebe Medium voltage converters Traktionsumrichter Traction drivesElektrische Eigen
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: MG25Q6ES51 | 7MBR75U2B060
Keywords - FD250R65KE3-K transistor datasheet
FD250R65KE3-K cross reference
FD250R65KE3-K equivalent finder
FD250R65KE3-K lookup
FD250R65KE3-K substitution
FD250R65KE3-K replacement
History: MG25Q6ES51 | 7MBR75U2B060



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