All IGBT. FD250R65KE3-K Datasheet

 

FD250R65KE3-K Datasheet and Replacement


   Type Designator: FD250R65KE3-K
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 4800 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 6500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 250 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.6 V
   Tj ⓘ - Maximum Junction Temperature: 125 ℃
   tr ⓘ - Rise Time, typ: 330 nS
   Package: MODULE
 

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FD250R65KE3-K Datasheet (PDF)

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FD250R65KE3-K

FD250R65KE3-Khochisolierendes Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diodehighly insulated module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diodeV = 6500VCESI = 250A / I = 500AC nom CRMPotentielle Anwendungen Potential Applications Mittelspannungsantriebe Medium voltage converters Traktionsumrichter Traction drivesElektrische Eigen

Datasheet: FD1000R17IE4D_B2 , FD1000R33HE3-K , FD1000R33HL3-K , FD1200R17KE3-K , FD1200R17KE3-K_B2 , FD1400R12IP4D , FD200R12KE3 , FD200R12PT4_B6 , RJH30E2DPP , FD300R06KE3 , FD300R07PE4_B6 , FD300R12KE3 , FD300R12KS4 , FD300R12KS4_B5 , FD400R12KE3_B5 , FD400R33KF2C , FD400R33KF2C-K .

History: MWI150-12T8T

Keywords - FD250R65KE3-K transistor datasheet

 FD250R65KE3-K cross reference
 FD250R65KE3-K equivalent finder
 FD250R65KE3-K lookup
 FD250R65KE3-K substitution
 FD250R65KE3-K replacement

 

 
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