FD250R65KE3-K PDF and Equivalents Search

 

FD250R65KE3-K Specs and Replacement

Type Designator: FD250R65KE3-K

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 4800 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 6500 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 250 A @25℃

Tj ⓘ - Maximum Junction Temperature: 125 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃

tr ⓘ - Rise Time, typ: 330 nS

Package: MODULE

 FD250R65KE3-K Substitution

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FD250R65KE3-K datasheet

 ..1. Size:518K  infineon
 fd250r65ke3-k.pdf pdf_icon

FD250R65KE3-K

FD250R65KE3-K hochisolierendes Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode highly insulated module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode V = 6500V CES I = 250A / I = 500A C nom CRM Potentielle Anwendungen Potential Applications Mittelspannungsantriebe Medium voltage converters Traktionsumrichter Traction drives Elektrische Eigen... See More ⇒

Specs: FD1000R17IE4D_B2 , FD1000R33HE3-K , FD1000R33HL3-K , FD1200R17KE3-K , FD1200R17KE3-K_B2 , FD1400R12IP4D , FD200R12KE3 , FD200R12PT4_B6 , IKW75N60T , FD300R06KE3 , FD300R07PE4_B6 , FD300R12KE3 , FD300R12KS4 , FD300R12KS4_B5 , FD400R12KE3_B5 , FD400R33KF2C , FD400R33KF2C-K .

Keywords - FD250R65KE3-K transistor spec

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