All IGBT. FD401R17KF6C_B2 Datasheet

 

FD401R17KF6C_B2 Datasheet and Replacement


   Type Designator: FD401R17KF6C_B2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 3150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 400 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   trⓘ - Rise Time, typ: 150 nS
   Package: MODULE
      - IGBT Cross-Reference

 

FD401R17KF6C_B2 Datasheet (PDF)

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FD401R17KF6C_B2

Technische Information / Technical InformationIGBT-ModuleFD401R17KF6C_B2IGBT-modules1700V IGBT Modul mit low loss IGBT der 2.ten Generation und softer Emitter Controlled Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft Emitter Controlled Diode Vorlufige DatenIGBT, Brems-Chopper / IGBT, Brake-Chopper Preliminary DataHchstzulssige Werte / Maximum Rated V

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: MMG75J120U6HN | IXBH9N160G

Keywords - FD401R17KF6C_B2 transistor datasheet

 FD401R17KF6C_B2 cross reference
 FD401R17KF6C_B2 equivalent finder
 FD401R17KF6C_B2 lookup
 FD401R17KF6C_B2 substitution
 FD401R17KF6C_B2 replacement

 

 
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