All IGBT. FD401R17KF6C_B2 Datasheet

 

FD401R17KF6C_B2 IGBT. Datasheet pdf. Equivalent


   Type Designator: FD401R17KF6C_B2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 3150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 400 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   trⓘ - Rise Time, typ: 150 nS
   Package: MODULE

 FD401R17KF6C_B2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FD401R17KF6C_B2 Datasheet (PDF)

 0.1. Size:446K  infineon
 fd401r17kf6c b2.pdf

FD401R17KF6C_B2 FD401R17KF6C_B2

Technische Information / Technical InformationIGBT-ModuleFD401R17KF6C_B2IGBT-modules1700V IGBT Modul mit low loss IGBT der 2.ten Generation und softer Emitter Controlled Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft Emitter Controlled Diode Vorlufige DatenIGBT, Brems-Chopper / IGBT, Brake-Chopper Preliminary DataHchstzulssige Werte / Maximum Rated V

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