FD650R17IE4 Datasheet and Replacement
Type Designator: FD650R17IE4
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 4150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 650 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 90 nS
Package: MODULE
FD650R17IE4 substitution
FD650R17IE4 Datasheet (PDF)
fd650r17ie4.pdf
Technische Information / Technical InformationIGBT-ModuleFD650R17IE4IGBT-modulesPrimePACK2 Modul und NTCPrimePACK2 module and NTCVorlufige Daten / Preliminary DataV = 1700VCESI = 650A / I = 1300AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Chopper-Anwendungen Chopper Applications Hochleistungsu
fd650r17ie4d b2.pdf
/ Technical InformationIGBT-FD650R17IE4D_B2IGBT-modulesPrimePACK2 NTCPrimePACK2 module and NTC / Preliminary DataV = 1700VCESI = 650A / I = 1300AC nom CRM Typical Applications 3-Level-Applications Chopper Applications Auxiliary I
Datasheet: FD500R65KE3-K , FD600R06ME3_B11_S2 , FD600R06ME3_S2 , FD600R12IP4D , FD600R12KF4 , FD600R16KF4 , FD600R17KE3_B2 , FD600R17KF6C_B2 , IKW30N60H3 , FD650R17IE4D_B2 , FD800R17KE3_B2 , FD800R17KF6C_B2 , FD800R33KF2C , FD800R33KF2C-K , FD800R33KL2C-K_B5 , FD900R12IP4D , FD900R12IP4DV .
History: SMC7G50US60
Keywords - FD650R17IE4 transistor datasheet
FD650R17IE4 cross reference
FD650R17IE4 equivalent finder
FD650R17IE4 lookup
FD650R17IE4 substitution
FD650R17IE4 replacement
History: SMC7G50US60
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
irf 830 | mpsa56 transistor | transistor 2222a | 8050 transistor | bc238 | 2sb772 | 2n2222a-1726 datasheet | bc516