FD650R17IE4D_B2 PDF and Equivalents Search

 

FD650R17IE4D_B2 Specs and Replacement

Type Designator: FD650R17IE4D_B2

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 4150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 650 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 105 nS

Package: MODULE

 FD650R17IE4D_B2 Substitution

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FD650R17IE4D_B2 datasheet

 0.1. Size:1946K  infineon
 fd650r17ie4d b2.pdf pdf_icon

FD650R17IE4D_B2

/ Technical Information IGBT- FD650R17IE4D_B2 IGBT-modules PrimePACK 2 NTC PrimePACK 2 module and NTC / Preliminary Data V = 1700V CES I = 650A / I = 1300A C nom CRM Typical Applications 3-Level-Applications Chopper Applications Auxiliary I... See More ⇒

 3.1. Size:1725K  infineon
 fd650r17ie4.pdf pdf_icon

FD650R17IE4D_B2

Technische Information / Technical Information IGBT-Module FD650R17IE4 IGBT-modules PrimePACK 2 Modul und NTC PrimePACK 2 module and NTC Vorl ufige Daten / Preliminary Data V = 1700V CES I = 650A / I = 1300A C nom CRM Typische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Chopper-Anwendungen Chopper Applications Hochleistungsu... See More ⇒

Specs: FD600R06ME3_B11_S2 , FD600R06ME3_S2 , FD600R12IP4D , FD600R12KF4 , FD600R16KF4 , FD600R17KE3_B2 , FD600R17KF6C_B2 , FD650R17IE4 , YGW40N65F1 , FD800R17KE3_B2 , FD800R17KF6C_B2 , FD800R33KF2C , FD800R33KF2C-K , FD800R33KL2C-K_B5 , FD900R12IP4D , FD900R12IP4DV , FD-DF80R12W1H3_B52 .

Keywords - FD650R17IE4D_B2 transistor spec

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