All IGBT. FD650R17IE4D_B2 Datasheet

 

FD650R17IE4D_B2 Datasheet and Replacement


   Type Designator: FD650R17IE4D_B2
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 4150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 650 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 105 nS
   Package: MODULE
      - IGBT Cross-Reference

 

FD650R17IE4D_B2 Datasheet (PDF)

 0.1. Size:1946K  infineon
 fd650r17ie4d b2.pdf pdf_icon

FD650R17IE4D_B2

/ Technical InformationIGBT-FD650R17IE4D_B2IGBT-modulesPrimePACK2 NTCPrimePACK2 module and NTC / Preliminary DataV = 1700VCESI = 650A / I = 1300AC nom CRM Typical Applications 3-Level-Applications Chopper Applications Auxiliary I

 3.1. Size:1725K  infineon
 fd650r17ie4.pdf pdf_icon

FD650R17IE4D_B2

Technische Information / Technical InformationIGBT-ModuleFD650R17IE4IGBT-modulesPrimePACK2 Modul und NTCPrimePACK2 module and NTCVorlufige Daten / Preliminary DataV = 1700VCESI = 650A / I = 1300AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Chopper-Anwendungen Chopper Applications Hochleistungsu

Datasheet: FD600R06ME3_B11_S2 , FD600R06ME3_S2 , FD600R12IP4D , FD600R12KF4 , FD600R16KF4 , FD600R17KE3_B2 , FD600R17KF6C_B2 , FD650R17IE4 , SGH80N60UFD , FD800R17KE3_B2 , FD800R17KF6C_B2 , FD800R33KF2C , FD800R33KF2C-K , FD800R33KL2C-K_B5 , FD900R12IP4D , FD900R12IP4DV , FD-DF80R12W1H3_B52 .

History: FGA30S120P | SMBH1G100US60 | RJP60V0DPM | GT10G101 | MG300N1US1 | GT50T101 | IRGP6660D

Keywords - FD650R17IE4D_B2 transistor datasheet

 FD650R17IE4D_B2 cross reference
 FD650R17IE4D_B2 equivalent finder
 FD650R17IE4D_B2 lookup
 FD650R17IE4D_B2 substitution
 FD650R17IE4D_B2 replacement

 

 
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