FD-DF80R12W1H3_B52 PDF and Equivalents Search

 

FD-DF80R12W1H3_B52 Specs and Replacement

Type Designator: FD-DF80R12W1H3_B52

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 215 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Package: MODULE

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FD-DF80R12W1H3_B52 datasheet

 ..1. Size:1271K  infineon
 fd-df80r12w1h3 b52.pdf pdf_icon

FD-DF80R12W1H3_B52

/ Technical Information IGBT- FD-DF80R12W1H3_B52 IGBT-Module EasyPACK and PressFIT / NTC EasyPACK module and PressFIT / NTC / Preliminary Data V = 1200V CES I = 40A / I = 80A C nom CRM Typical Applications H... See More ⇒

Specs: FD650R17IE4D_B2, FD800R17KE3_B2, FD800R17KF6C_B2, FD800R33KF2C, FD800R33KF2C-K, FD800R33KL2C-K_B5, FD900R12IP4D, FD900R12IP4DV, RJH60F7BDPQ-A0, FF1000R17IE4, FF1000R17IE4D_B2, FF200R06YE3, FF200R12KE4, FF200R12KS4, FF200R12KT3, FF200R12KT3_E, FF200R12KT4

Keywords - FD-DF80R12W1H3_B52 transistor spec

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