FD-DF80R12W1H3_B52 Datasheet and Replacement
Type Designator: FD-DF80R12W1H3_B52
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 215 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 20 nS
Package: MODULE
- IGBT Cross-Reference
FD-DF80R12W1H3_B52 Datasheet (PDF)
fd-df80r12w1h3 b52.pdf
/ Technical InformationIGBT-FD-DF80R12W1H3_B52IGBT-ModuleEasyPACK and PressFIT / NTCEasyPACK module and PressFIT / NTC / Preliminary DataV = 1200VCESI = 40A / I = 80AC nom CRM Typical Applications H
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL
Keywords - FD-DF80R12W1H3_B52 transistor datasheet
FD-DF80R12W1H3_B52 cross reference
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FD-DF80R12W1H3_B52 substitution
FD-DF80R12W1H3_B52 replacement
History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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