FD-DF80R12W1H3_B52 Datasheet and Replacement
Type Designator: FD-DF80R12W1H3_B52
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 215 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 20 nS
Package: MODULE
FD-DF80R12W1H3_B52 substitution
FD-DF80R12W1H3_B52 Datasheet (PDF)
fd-df80r12w1h3 b52.pdf
/ Technical InformationIGBT-FD-DF80R12W1H3_B52IGBT-ModuleEasyPACK and PressFIT / NTCEasyPACK module and PressFIT / NTC / Preliminary DataV = 1200VCESI = 40A / I = 80AC nom CRM Typical Applications H
Datasheet: FD650R17IE4D_B2 , FD800R17KE3_B2 , FD800R17KF6C_B2 , FD800R33KF2C , FD800R33KF2C-K , FD800R33KL2C-K_B5 , FD900R12IP4D , FD900R12IP4DV , STGB10NB37LZ , FF1000R17IE4 , FF1000R17IE4D_B2 , FF200R06YE3 , FF200R12KE4 , FF200R12KS4 , FF200R12KT3 , FF200R12KT3_E , FF200R12KT4 .
History: BSM15GP120
Keywords - FD-DF80R12W1H3_B52 transistor datasheet
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History: BSM15GP120
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