All IGBT. FD-DF80R12W1H3_B52 Datasheet

 

FD-DF80R12W1H3_B52 IGBT. Datasheet pdf. Equivalent


   Type Designator: FD-DF80R12W1H3_B52
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 215 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 20 nS
   Package: MODULE

 FD-DF80R12W1H3_B52 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FD-DF80R12W1H3_B52 Datasheet (PDF)

 ..1. Size:1271K  infineon
 fd-df80r12w1h3 b52.pdf

FD-DF80R12W1H3_B52 FD-DF80R12W1H3_B52

/ Technical InformationIGBT-FD-DF80R12W1H3_B52IGBT-ModuleEasyPACK and PressFIT / NTCEasyPACK module and PressFIT / NTC / Preliminary DataV = 1200VCESI = 40A / I = 80AC nom CRM Typical Applications H

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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