FD-DF80R12W1H3_B52 Datasheet and Replacement
Type Designator: FD-DF80R12W1H3_B52
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 215 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 20 nS
Package: MODULE
FD-DF80R12W1H3_B52 substitution
FD-DF80R12W1H3_B52 Datasheet (PDF)
fd-df80r12w1h3 b52.pdf
/ Technical InformationIGBT-FD-DF80R12W1H3_B52IGBT-ModuleEasyPACK and PressFIT / NTCEasyPACK module and PressFIT / NTC / Preliminary DataV = 1200VCESI = 40A / I = 80AC nom CRM Typical Applications H
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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