FF1200R12KE3 IGBT. Datasheet pdf. Equivalent
Type Designator: FF1200R12KE3
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 5000 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 1200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 230 nS
Package: MODULE
FF1200R12KE3 Transistor Equivalent Substitute - IGBT Cross-Reference Search
FF1200R12KE3 Datasheet (PDF)
ff1200r12ke3.pdf
Technische Information / Technical InformationIGBT-ModuleFF1200R12KE3IGBT-modulesVorlufige Daten / Preliminary DataV = 1200VCESI = 1200A / I = 2400AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching Application Hochleistungsumrichter High Powe
ff1200r12ie5.pdf
FF1200R12IE5PrimePACK2 Modul mit Trench/Feldstopp IGBT5, Emitter Controlled 5 Diode und NTCPrimePACK2 module with Trench/Fieldstop IGBT5, Emitter Controlled 5 diode and NTCV = 1200VCESI = 1200A / I = 2400AC nom CRMPotentielle Anwendungen Potential Applications Hochleistungsumrichter High power converters Motorantriebe Motor drives USV-Systeme UPS s
ff1200r12ie5p.pdf
FF1200R12IE5PPrimePACK2 Modul mit Trench/Feldstopp IGBT5, Emitter Controlled 5 Diode und NTC / bereitsaufgetragenem Thermal Interface MaterialPrimePACK2 module with Trench/Fieldstop IGBT5, Emitter Controlled 5 diode and NTC / pre-appliedThermal Interface MaterialV = 1200VCESI = 1200A / I = 2400AC nom CRMPotentielle Anwendungen Potential Applications Hochleistungsumr
ff1200r17ke3 b2.pdf
/ Technical InformationIGBT-FF1200R17KE3_B2IGBT-modulesIGBT- / IGBT,Inverter Preliminary Data / Maximum Rated ValuesT = 25C V 1700 Vvj CESCollector-emitter voltageDC T = 80C, T = 150C I 1200 AC vj max C n
ff1200r17kp4-b2.pdf
FF1200R17KP4_B2IHM-A /IGBT4IHM-A module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diodeV = 1700VCESI = 1200A / I = 2400AC nom CRM Potential Applications Medium voltage converters High power converters Tract
ff1200r17ip5.pdf
FF1200R17IP5PrimePACK2 Modul mit Trench/Feldstopp IGBT5, Emitter Controlled 5 Diode und NTCPrimePACK2 module with Trench/Fieldstop IGBT5, Emitter Controlled 5 diode and NTCV = 1700VCESI = 1200A / I = 2400AC nom CRMPotentielle Anwendungen Potential Applications Hochleistungsumrichter High power converters Motorantriebe Motor drives Traktionsumrichter
ff1200r17kp4 b2.pdf
Technische Information / Technical InformationIGBT-ModulFF1200R17KP4_B2IGBT-ModuleIHM-A Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 3 DiodeIHM-A module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diodeV = 1700VCESI = 1200A / I = 2400AC nom CRMTypische Anwendungen Typical Applications Hochleistungsumrichter High Power Converters Mittelspannu
ff1200r17ke3.pdf
Technische Information / Technical InformationIGBT-ModuleFF1200R17KE3IGBT-modulesVorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1700 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 1200 AC vj max C nomContinuous DC collector
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