All IGBT. HGTP6N40E1D Datasheet

 

HGTP6N40E1D IGBT. Datasheet pdf. Equivalent

Type Designator: HGTP6N40E1D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 75

Maximum Collector-Emitter Voltage |Vce|, V: 400

Collector-Emitter saturation Voltage |Vcesat|, V: 2.9

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 10

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 90

Package: TO220AB

HGTP6N40E1D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTP6N40E1D Datasheet (PDF)

6.1. hgtp6n40.pdf Size:40K _harris_semi

HGTP6N40E1D
HGTP6N40E1D

HGTP6N40E1D, S E M I C O N D U C T O R HGTP6N50E1D 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB • 6A, 400V and 500V EMITTER • Latch Free Operation COLLECTOR • TFALL: < 1.0µs GATE • High Input Impedance COLLECTOR (FLANGE) • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description

Datasheet: HGTP3N60B3 , HGTP3N60B3D , HGTP3N60C3 , HGTP3N60C3D , HGTP5N120BN , HGTP5N120BND , HGTP5N120CN , HGTP5N120CND , GT15Q101 , HGTP6N50E1D , HGTP7N60A4 , HGTP7N60A4D , HGTP7N60B3 , HGTP7N60B3D , HGTP7N60C3 , HGTP7N60C3D , IRG4BC10K .

 

 
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