HGTP6N40E1D Datasheet. Specs and Replacement

Type Designator: HGTP6N40E1D  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 75 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 7.5 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

tr ⓘ - Rise Time, typ: 32 nS

Package: TO220AB

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HGTP6N40E1D datasheet

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HGTP6N40E1D

HGTP6N40E1D, S E M I C O N D U C T O R HGTP6N50E1D 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB 6A, 400V and 500V EMITTER Latch Free Operation COLLECTOR TFALL ... See More ⇒

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HGTP6N40E1D

HGTP6N40E1D, S E M I C O N D U C T O R HGTP6N50E1D 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB 6A, 400V and 500V EMITTER Latch Free Operation COLLECTOR TFALL ... See More ⇒

Specs: HGTP3N60B3, HGTP3N60B3D, HGTP3N60C3, HGTP3N60C3D, HGTP5N120BN, HGTP5N120BND, HGTP5N120CN, HGTP5N120CND, CRG75T65AK5HD, HGTP6N50E1D, HGTP7N60A4, HGTP7N60A4D, HGTP7N60B3, HGTP7N60B3D, HGTP7N60C3, HGTP7N60C3D, IRG4BC10K

Keywords - HGTP6N40E1D transistor spec

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