HGTP6N40E1D Specs and Replacement
Type Designator: HGTP6N40E1D
Type: IGBT + Anti-Parallel Diode
Marking Code: G6N40E1D
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 75 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 7.5 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 32 nS
Qg ⓘ - Total Gate Charge, typ: 6.9 nC
Package: TO220AB
HGTP6N40E1D Substitution
HGTP6N40E1D specs
hgtp6n40e1d hgtp6n50e1d.pdf
HGTP6N40E1D, S E M I C O N D U C T O R HGTP6N50E1D 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB 6A, 400V and 500V EMITTER Latch Free Operation COLLECTOR TFALL ... See More ⇒
hgtp6n40.pdf
HGTP6N40E1D, S E M I C O N D U C T O R HGTP6N50E1D 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB 6A, 400V and 500V EMITTER Latch Free Operation COLLECTOR TFALL ... See More ⇒
Specs: HGTP3N60B3 , HGTP3N60B3D , HGTP3N60C3 , HGTP3N60C3D , HGTP5N120BN , HGTP5N120BND , HGTP5N120CN , HGTP5N120CND , CRG40T60AK3HD , HGTP6N50E1D , HGTP7N60A4 , HGTP7N60A4D , HGTP7N60B3 , HGTP7N60B3D , HGTP7N60C3 , HGTP7N60C3D , IRG4BC10K .
Keywords - HGTP6N40E1D transistor spec
HGTP6N40E1D cross reference
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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