All IGBT. HGTP6N50E1D Datasheet

 

HGTP6N50E1D Datasheet and Replacement


   Type Designator: HGTP6N50E1D
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 75 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 7.5 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 32 nS
   Package: TO220AB
      - IGBT Cross-Reference

 

HGTP6N50E1D Datasheet (PDF)

 ..1. Size:40K  1
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HGTP6N50E1D

HGTP6N40E1D,S E M I C O N D U C T O RHGTP6N50E1D6A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-220AB 6A, 400V and 500VEMITTER Latch Free OperationCOLLECTOR TFALL:

 8.1. Size:40K  harris semi
 hgtp6n40.pdf pdf_icon

HGTP6N50E1D

HGTP6N40E1D,S E M I C O N D U C T O RHGTP6N50E1D6A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-220AB 6A, 400V and 500VEMITTER Latch Free OperationCOLLECTOR TFALL:

Datasheet: HGTP3N60B3D , HGTP3N60C3 , HGTP3N60C3D , HGTP5N120BN , HGTP5N120BND , HGTP5N120CN , HGTP5N120CND , HGTP6N40E1D , IKW30N60H3 , HGTP7N60A4 , HGTP7N60A4D , HGTP7N60B3 , HGTP7N60B3D , HGTP7N60C3 , HGTP7N60C3D , IRG4BC10K , IRG4BC10KD .

History: MMG300D120B6TC

Keywords - HGTP6N50E1D transistor datasheet

 HGTP6N50E1D cross reference
 HGTP6N50E1D equivalent finder
 HGTP6N50E1D lookup
 HGTP6N50E1D substitution
 HGTP6N50E1D replacement

 

 
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