HGTP6N50E1D Datasheet and Replacement
Type Designator: HGTP6N50E1D
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 75 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 7.5 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 32 nS
Package: TO220AB
HGTP6N50E1D substitution
HGTP6N50E1D Datasheet (PDF)
hgtp6n40e1d hgtp6n50e1d.pdf
HGTP6N40E1D,S E M I C O N D U C T O RHGTP6N50E1D6A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-220AB 6A, 400V and 500VEMITTER Latch Free OperationCOLLECTOR TFALL:
hgtp6n40.pdf
HGTP6N40E1D,S E M I C O N D U C T O RHGTP6N50E1D6A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-220AB 6A, 400V and 500VEMITTER Latch Free OperationCOLLECTOR TFALL:
Datasheet: HGTP3N60B3D , HGTP3N60C3 , HGTP3N60C3D , HGTP5N120BN , HGTP5N120BND , HGTP5N120CN , HGTP5N120CND , HGTP6N40E1D , IRGP4066D , HGTP7N60A4 , HGTP7N60A4D , HGTP7N60B3 , HGTP7N60B3D , HGTP7N60C3 , HGTP7N60C3D , IRG4BC10K , IRG4BC10KD .
History: IKQ120N60TA
Keywords - HGTP6N50E1D transistor datasheet
HGTP6N50E1D cross reference
HGTP6N50E1D equivalent finder
HGTP6N50E1D lookup
HGTP6N50E1D substitution
HGTP6N50E1D replacement
History: IKQ120N60TA
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
mpsa56 transistor equivalent | 13009 transistor | irf3205 equivalent | ksa992 transistor | 2n2926 | ksa992 pinout | 2n1308 transistor | p609