All IGBT. SKM450GB12E4 Datasheet

 

SKM450GB12E4 IGBT. Datasheet pdf. Equivalent


   Type Designator: SKM450GB12E4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 699 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.82 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 1760 pF
   Qgⓘ - Total Gate Charge, typ: 2550 nC
   Package: MODULE

 SKM450GB12E4 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SKM450GB12E4 Datasheet (PDF)

 ..1. Size:334K  semikron
 skm450gb12e4.pdf

SKM450GB12E4 SKM450GB12E4

SKM450GB12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 699 ATj = 175 CTc =80C 538 AICnom 450 AICRM ICRM = 3xICnom 1350 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 440 ATj = 175 CSKM450GB12E4Tc

Datasheet: BSM50GD120DN2 , BSM50GD120DN2E3226 , BSM50GD120DN2G , BSM50GD170DL , BSM50GD60DLC , BSM50GD60DLC_E3226 , BSM50GP120 , BSM50GP60 , YGW60N65F1A1 , SKM50GAL12T4 , SKM50GB12T4 , SKM50GB12V , SKM600GA12E4 , SKM600GA12T4 , SKM600GA12V , SKM600GA176D , SKM600GB066D .

 

 
Back to Top