SKM450GB12E4 PDF and Equivalents Search

 

SKM450GB12E4 Specs and Replacement

Type Designator: SKM450GB12E4

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 699 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.82 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Coesⓘ - Output Capacitance, typ: 1760 pF

Package: MODULE

 SKM450GB12E4 Substitution

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SKM450GB12E4 datasheet

 ..1. Size:334K  semikron
 skm450gb12e4.pdf pdf_icon

SKM450GB12E4

SKM450GB12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 699 A Tj = 175 C Tc =80 C 538 A ICnom 450 A ICRM ICRM = 3xICnom 1350 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C IGBT4 Modules Inverse diode IF Tc =25 C 440 A Tj = 175 C SKM450GB12E4 Tc ... See More ⇒

Specs: BSM50GD120DN2, BSM50GD120DN2E3226, BSM50GD120DN2G, BSM50GD170DL, BSM50GD60DLC, BSM50GD60DLC_E3226, BSM50GP120, BSM50GP60, SGT50T65FD1PN, SKM50GAL12T4, SKM50GB12T4, SKM50GB12V, SKM600GA12E4, SKM600GA12T4, SKM600GA12V, SKM600GA176D, SKM600GB066D

Keywords - SKM450GB12E4 transistor spec

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