SKM450GB12E4 Datasheet and Replacement
Type Designator: SKM450GB12E4
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 699 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.82 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 1760 pF
Package: MODULE
- IGBT Cross-Reference
SKM450GB12E4 Datasheet (PDF)
skm450gb12e4.pdf

SKM450GB12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 699 ATj = 175 CTc =80C 538 AICnom 450 AICRM ICRM = 3xICnom 1350 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 440 ATj = 175 CSKM450GB12E4Tc
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: MMG300D120B6TC
Keywords - SKM450GB12E4 transistor datasheet
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History: MMG300D120B6TC



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