SKM450GB12E4 Datasheet and Replacement
Type Designator: SKM450GB12E4
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 699 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.82 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 1760 pF
Package: MODULE
SKM450GB12E4 substitution
SKM450GB12E4 Datasheet (PDF)
skm450gb12e4.pdf
SKM450GB12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 699 ATj = 175 CTc =80C 538 AICnom 450 AICRM ICRM = 3xICnom 1350 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 440 ATj = 175 CSKM450GB12E4Tc
Datasheet: BSM50GD120DN2 , BSM50GD120DN2E3226 , BSM50GD120DN2G , BSM50GD170DL , BSM50GD60DLC , BSM50GD60DLC_E3226 , BSM50GP120 , BSM50GP60 , GT30G124 , SKM50GAL12T4 , SKM50GB12T4 , SKM50GB12V , SKM600GA12E4 , SKM600GA12T4 , SKM600GA12V , SKM600GA176D , SKM600GB066D .
History: OST30N65KTXF
Keywords - SKM450GB12E4 transistor datasheet
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History: OST30N65KTXF
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