All IGBT. SKM50GB12T4 Datasheet

 

SKM50GB12T4 IGBT. Datasheet pdf. Equivalent

Type Designator: SKM50GB12T4

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 1.85

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 81

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 29

Maximum Collector Capacity (Cc), pF: 200

Package: MODULE

SKM50GB12T4 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SKM50GB12T4 Datasheet (PDF)

1.1. skm50gb12t4.pdf Size:459K _igbt

SKM50GB12T4
SKM50GB12T4

SKM50GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 81 A Tj = 175 °C Tc =80°C 62 A ICnom 50 A ICRM ICRM = 3xICnom 150 A VGES -20 ... 20 V VCC = 800 V SEMITRANS®2 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Fast IGBT4 Modules Inverse diode IF Tc =25°C 65 A Tj = 175 °C SKM50GB12T4 Tc =80°C 49 A

1.2. skm50gb123d.pdf Size:758K _igbt

SKM50GB12T4
SKM50GB12T4



 1.3. skm50gb12v.pdf Size:382K _igbt

SKM50GB12T4
SKM50GB12T4

SKM50GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 79 A Tj = 175 °C Tc =80°C 60 A ICnom 50 A ICRM ICRM = 3xICnom 150 A VGES -20 ... 20 V VCC = 720 V SEMITRANS® 2 tpsc VGE ≤ 15 V Tj = 125 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Inverse diode IF Tc =25°C 65 A Tj = 175 °C SKM50GB12V Tc =80°C 49 A IFnom 50 A Target Da

Datasheet: BSM50GD120DN2G , BSM50GD170DL , BSM50GD60DLC , BSM50GD60DLC_E3226 , BSM50GP120 , BSM50GP60 , SKM450GB12E4 , SKM50GAL12T4 , IRG7R313U , SKM50GB12V , SKM600GA12E4 , SKM600GA12T4 , SKM600GA12V , SKM600GA176D , SKM600GB066D , SKM600GB126D , SII100N06 .

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