SKM600GB126D Spec and Replacement, IGBT Equivalent Finder, Cross Reference

SKM600GB126D Specs and Replacement

Type Designator: SKM600GB126D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 660 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 60 nS

Coesⓘ - Output Capacitance, typ: 11000 pF

Package: MODULE

SKM600GB126D Substitution

- IGBT ⓘ Cross-Reference Search

SKM600GB126D datasheet

..1. Size:653K semikron
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7.1. Size:623K semikron
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SKM600GA12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 913 A Tj = 175 C Tc =80 C 702 A ICnom 600 A ICRM ICRM = 3xICnom 1800 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 4 tpsc VGE 15 V Tj =150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 707 A Tj = 175 C SKM600GA12T4 ... See More ⇒

7.2. Size:627K semikron
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SKM600GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 913 A Tj = 175 C Tc =80 C 702 A ICnom 600 A ICRM ICRM = 3xICnom 1800 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 4 tpsc VGE 15 V Tj =150 C 10 s VCES 1200 V Tj -40 ... 175 C IGBT4 Modules Inverse diode IF Tc =25 C 707 A Tj = 175 C SKM600GA12E4 Tc =8... See More ⇒