All IGBT. SII200N06 Datasheet

 

SII200N06 Datasheet and Replacement


   Type Designator: SII200N06
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 730 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 230 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 125 ℃
   tr ⓘ - Rise Time, typ: 43 nS
   Package: MODULE
 

 SII200N06 substitution

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SII200N06 Datasheet (PDF)

 ..1. Size:1412K  sirectifier
 sii200n06.pdf pdf_icon

SII200N06

SII200N06NPT IGBT ModulesDimensions in mm (1mm = 0.0394")TC = 25oC, unless otherwise specifiedAbsolute Maximum RatingsSymbol Conditions Values UnitsIGBT Wechselrichter/ IGBT InverterVCES 600 VIC 230(200) TC= 25(50)oC AICRM 400 TC= 50oC, tP =1ms APtotTC= 25oC, Tvj= 150oC 730 W_VGES +20VDiode Wechselrichter/ Diode Inverter IF 200 AIFRM400 tP =1ms A2VR

 7.1. Size:906K  sirectifier
 sii200n12.pdf pdf_icon

SII200N06

SII200N12NPT IGBT ModulesDimensions in mm (1mm = 0.0394")TC = 25oC, unless otherwise specifiedAbsolute Maximum RatingsSymbol Conditions Values Units1200VCES VIC 290(200) TC= 25(80)oC AICRM 580(400) TC= 25(80)oC, tP =1ms A_VGES+20 VPtot 1400 W_o_TVj,(Tstg) TOPERATION

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

Keywords - SII200N06 transistor datasheet

 SII200N06 cross reference
 SII200N06 equivalent finder
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