SII200N06 Specs and Replacement
Type Designator: SII200N06
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 730 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 230 A @25℃
Tj ⓘ - Maximum Junction Temperature: 125 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
Package: MODULE SII200N06 Substitution - IGBT ⓘ Cross-Reference Search
SII200N06 datasheet
sii200n06.pdf
SII200N06 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol Conditions Values Units IGBT Wechselrichter/ IGBT Inverter VCES 600 V IC 230(200) TC= 25(50)oC A ICRM 400 TC= 50oC, tP =1ms A Ptot TC= 25oC, Tvj= 150oC 730 W _ VGES +20 V Diode Wechselrichter/ Diode Inverter IF 200 A IFRM 400 tP =1ms A 2 VR... See More ⇒
sii200n12.pdf
SII200N12 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol Conditions Values Units 1200 VCES V IC 290(200) TC= 25(80)oC A ICRM 580(400) TC= 25(80)oC, tP =1ms A _ VGES +20 V Ptot 1400 W _ o _ TVj,(Tstg) TOPERATION ... See More ⇒
Specs: SKM600GA12V , SKM600GA176D , SKM600GB066D , SKM600GB126D , SII100N06 , SII100N12 , SII150N06 , SII150N12 , RJH3047 , SII200N12 , SII300N06 , SII50N06 , SII75N06 , SII75N12 , MMIX1B15N300C , MMIX1B20N300C , MMIX1G120N120A3V1 .
History: SGW13N60UFD
Keywords - SII200N06 transistor spec
SII200N06 cross reference
SII200N06 equivalent finder
SII200N06 lookup
SII200N06 substitution
SII200N06 replacement
History: SGW13N60UFD
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