SII200N12 Datasheet. Specs and Replacement

Type Designator: SII200N12  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1400 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 290 A @25℃

Tj ⓘ - Maximum Junction Temperature: 125 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

tr ⓘ - Rise Time, typ: 80 nS

Coesⓘ - Output Capacitance, typ: 2000 pF

Package: MODULE

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SII200N12 datasheet

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 sii200n12.pdf pdf_icon

SII200N12

SII200N12 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol Conditions Values Units 1200 VCES V IC 290(200) TC= 25(80)oC A ICRM 580(400) TC= 25(80)oC, tP =1ms A _ VGES +20 V Ptot 1400 W _ o _ TVj,(Tstg) TOPERATION ... See More ⇒

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SII200N12

SII200N06 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol Conditions Values Units IGBT Wechselrichter/ IGBT Inverter VCES 600 V IC 230(200) TC= 25(50)oC A ICRM 400 TC= 50oC, tP =1ms A Ptot TC= 25oC, Tvj= 150oC 730 W _ VGES +20 V Diode Wechselrichter/ Diode Inverter IF 200 A IFRM 400 tP =1ms A 2 VR... See More ⇒

Specs: SKM600GA176D, SKM600GB066D, SKM600GB126D, SII100N06, SII100N12, SII150N06, SII150N12, SII200N06, IHW20N135R5, SII300N06, SII50N06, SII75N06, SII75N12, MMIX1B15N300C, MMIX1B20N300C, MMIX1G120N120A3V1, MMIX1X200N60B3

Keywords - SII200N12 transistor spec

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