SII200N12 PDF and Equivalents Search

 

SII200N12 PDF Specs and Replacement


   Type Designator: SII200N12
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 1400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 290 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 125 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   tr ⓘ - Rise Time, typ: 80 nS
   Coesⓘ - Output Capacitance, typ: 2000 pF
   Package: MODULE
 

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SII200N12 PDF specs

 ..1. Size:906K  sirectifier
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SII200N12

SII200N12 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol Conditions Values Units 1200 VCES V IC 290(200) TC= 25(80)oC A ICRM 580(400) TC= 25(80)oC, tP =1ms A _ VGES +20 V Ptot 1400 W _ o _ TVj,(Tstg) TOPERATION ... See More ⇒

 7.1. Size:1412K  sirectifier
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SII200N12

SII200N06 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol Conditions Values Units IGBT Wechselrichter/ IGBT Inverter VCES 600 V IC 230(200) TC= 25(50)oC A ICRM 400 TC= 50oC, tP =1ms A Ptot TC= 25oC, Tvj= 150oC 730 W _ VGES +20 V Diode Wechselrichter/ Diode Inverter IF 200 A IFRM 400 tP =1ms A 2 VR... See More ⇒

Specs: SKM600GA176D , SKM600GB066D , SKM600GB126D , SII100N06 , SII100N12 , SII150N06 , SII150N12 , SII200N06 , IHW20N135R5 , SII300N06 , SII50N06 , SII75N06 , SII75N12 , MMIX1B15N300C , MMIX1B20N300C , MMIX1G120N120A3V1 , MMIX1X200N60B3 .

History: DGP15N65CTL

Keywords - SII200N12 transistor spec

 SII200N12 cross reference
 SII200N12 equivalent finder
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