SII200N12 Datasheet and Replacement
Type Designator: SII200N12
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 1400 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 290 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
Tj ⓘ - Maximum Junction Temperature: 125 ℃
tr ⓘ - Rise Time, typ: 80 nS
Coesⓘ - Output Capacitance, typ: 2000 pF
Package: MODULE
SII200N12 substitution
SII200N12 Datasheet (PDF)
sii200n12.pdf

SII200N12NPT IGBT ModulesDimensions in mm (1mm = 0.0394")TC = 25oC, unless otherwise specifiedAbsolute Maximum RatingsSymbol Conditions Values Units1200VCES VIC 290(200) TC= 25(80)oC AICRM 580(400) TC= 25(80)oC, tP =1ms A_VGES+20 VPtot 1400 W_o_TVj,(Tstg) TOPERATION
sii200n06.pdf

SII200N06NPT IGBT ModulesDimensions in mm (1mm = 0.0394")TC = 25oC, unless otherwise specifiedAbsolute Maximum RatingsSymbol Conditions Values UnitsIGBT Wechselrichter/ IGBT InverterVCES 600 VIC 230(200) TC= 25(50)oC AICRM 400 TC= 50oC, tP =1ms APtotTC= 25oC, Tvj= 150oC 730 W_VGES +20VDiode Wechselrichter/ Diode Inverter IF 200 AIFRM400 tP =1ms A2VR
Datasheet: SKM600GA176D , SKM600GB066D , SKM600GB126D , SII100N06 , SII100N12 , SII150N06 , SII150N12 , SII200N06 , CRG60T60AN3H , SII300N06 , SII50N06 , SII75N06 , SII75N12 , MMIX1B15N300C , MMIX1B20N300C , MMIX1G120N120A3V1 , MMIX1X200N60B3 .
History: OST25N65FMF | SII150N12
Keywords - SII200N12 transistor datasheet
SII200N12 cross reference
SII200N12 equivalent finder
SII200N12 lookup
SII200N12 substitution
SII200N12 replacement
History: OST25N65FMF | SII150N12



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