All IGBT. SII200N12 Datasheet

 

SII200N12 IGBT. Datasheet pdf. Equivalent


   Type Designator: SII200N12
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 290 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   trⓘ - Rise Time, typ: 80 nS
   Coesⓘ - Output Capacitance, typ: 2000 pF
   Package: MODULE

 SII200N12 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SII200N12 Datasheet (PDF)

 ..1. Size:906K  sirectifier
 sii200n12.pdf

SII200N12 SII200N12

SII200N12NPT IGBT ModulesDimensions in mm (1mm = 0.0394")TC = 25oC, unless otherwise specifiedAbsolute Maximum RatingsSymbol Conditions Values Units1200VCES VIC 290(200) TC= 25(80)oC AICRM 580(400) TC= 25(80)oC, tP =1ms A_VGES+20 VPtot 1400 W_o_TVj,(Tstg) TOPERATION

 7.1. Size:1412K  sirectifier
 sii200n06.pdf

SII200N12 SII200N12

SII200N06NPT IGBT ModulesDimensions in mm (1mm = 0.0394")TC = 25oC, unless otherwise specifiedAbsolute Maximum RatingsSymbol Conditions Values UnitsIGBT Wechselrichter/ IGBT InverterVCES 600 VIC 230(200) TC= 25(50)oC AICRM 400 TC= 50oC, tP =1ms APtotTC= 25oC, Tvj= 150oC 730 W_VGES +20VDiode Wechselrichter/ Diode Inverter IF 200 AIFRM400 tP =1ms A2VR

Datasheet: SKM600GA176D , SKM600GB066D , SKM600GB126D , SII100N06 , SII100N12 , SII150N06 , SII150N12 , SII200N06 , GT30F126 , SII300N06 , SII50N06 , SII75N06 , SII75N12 , MMIX1B15N300C , MMIX1B20N300C , MMIX1G120N120A3V1 , MMIX1X200N60B3 .

 

 
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