MMIX2S50N60B4D1 PDF and Equivalents Search

 

MMIX2S50N60B4D1 Specs and Replacement

Type Designator: MMIX2S50N60B4D1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 110 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 55 nS

Coesⓘ - Output Capacitance, typ: 176 pF

Package: PLASTIC-24PIN

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MMIX2S50N60B4D1 datasheet

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 mmix2s50n60b4d1.pdf pdf_icon

MMIX2S50N60B4D1

Advance Technical Information VCES = 600V Low Gain IGBT MMIX2S50N60B4D1 IC90 = 30A w/ Diode ES1 G1 ES2 G2 VCE(sat) 2.0V (Electrically Isolated Tab) tfi(typ) = 50ns ES1 E1 Short Circuit SOA Capability C1E2 C2 G1 ES2 G2 E1 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V C1E2 VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C2 VGES ... See More ⇒

Specs: MMIX1B15N300C , MMIX1B20N300C , MMIX1G120N120A3V1 , MMIX1X200N60B3 , MMIX1X200N60B3H1 , MMIX1X340N65B4 , MMIX1Y100N120C3H1 , MMIX1Y82N120C3H1 , CRG40T60AK3HD , MMIX4B22N300 , SIGC03T60E , SIGC03T60SE , SIGC03T60SNC , SIGC04T60 , SIGC04T60E , SIGC04T60G , SIGC04T60GE .

Keywords - MMIX2S50N60B4D1 transistor spec

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