All IGBT. MMIX2S50N60B4D1 Datasheet

 

MMIX2S50N60B4D1 Datasheet and Replacement


   Type Designator: MMIX2S50N60B4D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 110 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 55 nS
   Coesⓘ - Output Capacitance, typ: 176 pF
   Qgⓘ - Total Gate Charge, typ: 93 nC
   Package: PLASTIC-24PIN
      - IGBT Cross-Reference

 

MMIX2S50N60B4D1 Datasheet (PDF)

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MMIX2S50N60B4D1

Advance Technical InformationVCES = 600VLow Gain IGBT MMIX2S50N60B4D1IC90 = 30Aw/ DiodeES1 G1 ES2G2 VCE(sat) 2.0V (Electrically Isolated Tab)tfi(typ) = 50nsES1E1Short Circuit SOA Capability C1E2 C2 G1ES2G2E1Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V C1E2VCGR TJ = 25C to 150C, RGE = 1M 600 VC2VGES

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: NCE30TD60BP | FD200R12PT4_B6

Keywords - MMIX2S50N60B4D1 transistor datasheet

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