All IGBT. MMIX2S50N60B4D1 Datasheet

 

MMIX2S50N60B4D1 Datasheet and Replacement


   Type Designator: MMIX2S50N60B4D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 110 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 55 nS
   Coesⓘ - Output Capacitance, typ: 176 pF
   Qg ⓘ - Total Gate Charge, typ: 93 nC
   Package: PLASTIC-24PIN
 

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MMIX2S50N60B4D1 Datasheet (PDF)

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MMIX2S50N60B4D1

Advance Technical InformationVCES = 600VLow Gain IGBT MMIX2S50N60B4D1IC90 = 30Aw/ DiodeES1 G1 ES2G2 VCE(sat) 2.0V (Electrically Isolated Tab)tfi(typ) = 50nsES1E1Short Circuit SOA Capability C1E2 C2 G1ES2G2E1Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V C1E2VCGR TJ = 25C to 150C, RGE = 1M 600 VC2VGES

Datasheet: MMIX1B15N300C , MMIX1B20N300C , MMIX1G120N120A3V1 , MMIX1X200N60B3 , MMIX1X200N60B3H1 , MMIX1X340N65B4 , MMIX1Y100N120C3H1 , MMIX1Y82N120C3H1 , CRG40T60AK3HD , MMIX4B22N300 , SIGC03T60E , SIGC03T60SE , SIGC03T60SNC , SIGC04T60 , SIGC04T60E , SIGC04T60G , SIGC04T60GE .

History: ISL9V2540S3ST | BLG40T65FUK-W

Keywords - MMIX2S50N60B4D1 transistor datasheet

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