FGT412 PDF and Equivalents Search

 

FGT412 Specs and Replacement

Type Designator: FGT412

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 35 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 35 nS

Coesⓘ - Output Capacitance, typ: 120 pF

Package: TO-220F

 FGT412 Substitution

- IGBT ⓘ Cross-Reference Search

 

FGT412 datasheet

 ..1. Size:464K  sanken-ele
fgm603 fgt312 fgt313 fgt412 fgt612.pdf pdf_icon

FGT412

2-3 IGBT Selection Guide Selection Guide By VCES VCES IC PC Part Number Package (V) (A) (W) 330 20 35 FGT312 TO220F(FM20) 330 30 35 FGT313 TO220F(FM20) 400 20 35 FGT412 TO220F(FM20) 600 20 35 FGT612 TO220F(FM20) 600 25 60 FGM622S TO3PF(FM100) 600 30 60 FGM603 TO3PF(FM100) 600 30 60 FGM623S TO3PF(FM100) 600 50 150 MGD623N TO3P(MT100) 600 50 150 MGD623S TO3P(MT100) Transistors 15... See More ⇒

Specs: FGA60N65SMD , FGA6065ADF , FGA6560WDF , FGH30S130P , GT40WR21 , FGM603 , FGT312 , FGT313 , IKW40N65WR5 , FGT612 , 2PG001 , IKW30N65WR5 , MGD633 , GT20D201 , MBQ40T120FES , GT40RR21 , MBQ50T65FESC .

Keywords - FGT412 transistor spec

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