All IGBT. MGD633 Datasheet

 

MGD633 IGBT. Datasheet pdf. Equivalent


   Type Designator: MGD633
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 100 nS
   Coesⓘ - Output Capacitance, typ: 150 pF
   Qgⓘ - Total Gate Charge, typ: 65 nC
   Package: TO247

 MGD633 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MGD633 Datasheet (PDF)

 ..1. Size:935K  sanken-ele
 mgd633.pdf

MGD633 MGD633

VCE = 600 V, IC = 37 A Trench IGBT with Fast Recovery Diode MGD633 Data Sheet Description Package The MGD633 is 600 V trench IGBT. Sanken original TO247-3L trench structure decreases gate capacitance, and achieves (4) high speed switching and switching loss reduction. Thus, C the IGBT can improve the efficiency of your circuit. Features Low Saturation Voltage Hi

Datasheet: GT40WR21 , FGM603 , FGT312 , FGT313 , FGT412 , FGT612 , 2PG001 , IKW30N65WR5 , FGPF4533 , GT20D201 , MBQ40T120FES , GT40RR21 , MBQ50T65FESC , MBQ60T65PES , JNG25N120HS , SSG60N60N , PDMB100E6 .

 

 
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