All IGBT. GT40RR21 Datasheet

 

GT40RR21 Datasheet and Replacement


   Type Designator: GT40RR21
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 230 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 120 nS
   Package: TO3PN
      - IGBT Cross-Reference

 

GT40RR21 Datasheet (PDF)

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GT40RR21

GT40RR21Discrete IGBTs Silicon N-Channel IGBTGT40RR21GT40RR21GT40RR21GT40RR211. Applications1. Applications1. Applications1. Applications Dedicated to Voltage-Resonant Inverter Switching ApplicationsNote: The product(s) described herein should not be used for any other application.2. Features2. Features2. Features2. Features(1) 6.5th generation(2) The RC-IGB

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: SGP04N60

Keywords - GT40RR21 transistor datasheet

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