GT40RR21 PDF and Equivalents Search

 

GT40RR21 Specs and Replacement


   Type Designator: GT40RR21
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 40RR21
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 230 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
   tr ⓘ - Rise Time, typ: 120 nS
   Package: TO3PN
 

 GT40RR21 Substitution

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GT40RR21 datasheet

 ..1. Size:221K  toshiba
gt40rr21.pdf pdf_icon

GT40RR21

GT40RR21 Discrete IGBTs Silicon N-Channel IGBT GT40RR21 GT40RR21 GT40RR21 GT40RR21 1. Applications 1. Applications 1. Applications 1. Applications Dedicated to Voltage-Resonant Inverter Switching Applications Note The product(s) described herein should not be used for any other application. 2. Features 2. Features 2. Features 2. Features (1) 6.5th generation (2) The RC-IGB... See More ⇒

Specs: FGT313 , FGT412 , FGT612 , 2PG001 , IKW30N65WR5 , MGD633 , GT20D201 , MBQ40T120FES , GT30J122 , MBQ50T65FESC , MBQ60T65PES , JNG25N120HS , SSG60N60N , PDMB100E6 , SL40N60FL , MBQ50T65FDSC , STGW38IH120D .

Keywords - GT40RR21 transistor spec

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