GT40RR21 Specs and Replacement
Type Designator: GT40RR21
Type: IGBT + Anti-Parallel Diode
Marking Code: 40RR21
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 230 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
tr ⓘ - Rise Time, typ: 120 nS
Package: TO3PN
GT40RR21 Substitution
GT40RR21 datasheet
gt40rr21.pdf
GT40RR21 Discrete IGBTs Silicon N-Channel IGBT GT40RR21 GT40RR21 GT40RR21 GT40RR21 1. Applications 1. Applications 1. Applications 1. Applications Dedicated to Voltage-Resonant Inverter Switching Applications Note The product(s) described herein should not be used for any other application. 2. Features 2. Features 2. Features 2. Features (1) 6.5th generation (2) The RC-IGB... See More ⇒
Specs: FGT313 , FGT412 , FGT612 , 2PG001 , IKW30N65WR5 , MGD633 , GT20D201 , MBQ40T120FES , GT30J122 , MBQ50T65FESC , MBQ60T65PES , JNG25N120HS , SSG60N60N , PDMB100E6 , SL40N60FL , MBQ50T65FDSC , STGW38IH120D .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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