All IGBT. GT40RR21 Datasheet

 

GT40RR21 IGBT. Datasheet pdf. Equivalent


   Type Designator: GT40RR21
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 40RR21
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 230 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 120 nS
   Package: TO3PN

 GT40RR21 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT40RR21 Datasheet (PDF)

 ..1. Size:221K  toshiba
 gt40rr21.pdf

GT40RR21 GT40RR21

GT40RR21Discrete IGBTs Silicon N-Channel IGBTGT40RR21GT40RR21GT40RR21GT40RR211. Applications1. Applications1. Applications1. Applications Dedicated to Voltage-Resonant Inverter Switching ApplicationsNote: The product(s) described herein should not be used for any other application.2. Features2. Features2. Features2. Features(1) 6.5th generation(2) The RC-IGB

Datasheet: FGT313 , FGT412 , FGT612 , 2PG001 , IKW30N65WR5 , MGD633 , GT20D201 , MBQ40T120FES , IHW20N120R2 , MBQ50T65FESC , MBQ60T65PES , JNG25N120HS , SSG60N60N , PDMB100E6 , SL40N60FL , MBQ50T65FDSC , STGW38IH120D .

 

 
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